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2020 – today
- 2024
[j22]Leon Brackmann
, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel:
Improved Arithmetic Performance by Combining Stateful and Non-Stateful Logic in Resistive Random Access Memory 1T-1R Crossbars. Adv. Intell. Syst. 6(3) (2024)- [c39]Daniel Schön, Stephan Menzel:
Understanding the Thermal Aspects in Dense RRAM Memory Arrays. IMW 2024: 1-4 - [c38]Feng Liu, Xianyue Zhao, Ziang Chen, Christopher Bengel, Nan Du, Stephan Menzel:
Realization of Reading-based Ternary Łukasiewicz Logic using Memristive Devices. ISCAS 2024: 1-5 - [i7]Zhenming Yu, Stephan Menzel, John Paul Strachan, Emre Neftci:
Integration of Physics-Derived Memristor Models with Machine Learning Frameworks. CoRR abs/2403.06746 (2024) - [i6]Tyler Hennen, Leon Brackmann, Tobias Ziegler, Sebastian Siegel, Stephan Menzel, Rainer Waser, Dirk J. Wouters, Daniel Bedau:
Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design. CoRR abs/2404.06344 (2024) - [i5]Chandan Singh, Vasileios G. Ntinas, Dimitrios A. Prousalis, Yongmin Wang, Ahmet Samil Demirkol, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff:
Employing Vector Field Techniques on the Analysis of Memristor Cellular Nonlinear Networks Cell Dynamics. CoRR abs/2408.03260 (2024) - 2023
- [j21]Carsten Funck, Stefan Wiefels, Christopher Bengel, Kristoffer Schnieders, Susanne Hoffmann-Eifert, Regina Dittmann, Stephan Menzel:
A Physical Description of the Variability in Single-ReRAM Devices and Hardware-Based Neuronal Networks. Adv. Intell. Syst. 5(11) (2023) - [j20]Christopher Bengel, Leon Dixius, Rainer Waser, Dirk J. Wouters, Stephan Menzel:
Bit slicing approaches for variability aware ReRAM CIM macros. it Inf. Technol. 65(1-2): 3-12 (2023) - [j19]Milan Buttberg, Ilia Valov, Stephan Menzel:
Simulating the filament morphology in electrochemical metallization cells. Neuromorph. Comput. Eng. 3(2): 24010 (2023) - [j18]Christopher Bengel, Feng Liu, Ziang Chen, Xianyue Zhao, Rainer Waser, Heidemarie Schmidt, Nan Du, Stephan Menzel:
Ternary Łukasiewicz logic using memristive devices. Neuromorph. Comput. Eng. 3(4): 44001 (2023) - [j17]Seokki Son, Camilla La Torre, Andreas Kindsmüller, Vikas Rana, Stephan Menzel:
A Study of the Electroforming Process in 1T1R Memory Arrays. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(2): 558-568 (2023) - [c37]Feng Liu, Xianyue Zhao, Ziang Chen, Christopher Bengel, Nan Du, Stephan Menzel:
Realization of Ternary Łukasiewicz Logic using BiFeO3-based Memristive Devices. ICECS 2023: 1-4 - [c36]Tobias Ziegler, Leon Brackmann, Tyler Hennen, Christopher Bengel, Stephan Menzel, Dirk J. Wouters:
Eliminating Capacitive Sneak Paths in Associative Capacitive Networks based on Complementary Resistive Switches for In-Memory Computing. IMW 2023: 1-4 - [c35]Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia:
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. IMW 2023: 1-4 - [c34]Leon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel:
Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories. ISCAS 2023: 1-5 - [c33]Vasileios G. Ntinas, Yongmin Wang, Ahmet Samil Demirkol, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff:
Design and Analysis of Isolated Voltage-Mode Memristor Cellular Nonlinear Network Cells. ISCAS 2023: 1-5 - [c32]Nicolas Schmitt, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Vasileios G. Ntinas, Dimitrios A. Prousalis, Ronald Tetzlaff, Spyridon Nikolaidis, Stephan Menzel, Vikas Rana:
Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich. MOCAST 2023: 1-6 - [c31]Simranjeet Singh, Elmira Moussavi, Christopher Bengel, Sachin B. Patkar, Rainer Waser, Rainer Leupers, Vikas Rana, Vivek Pachauri, Stephan Menzel, Farhad Merchant:
Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies. NANOARCH 2023: 30:1-30:7 - [c30]Yongmin Wang, Kristoffer Schnieders, Vasileios G. Ntinas, Alon Ascoli, Felix Cüppers, Susanne Hoffmann-Eifert, Stefan Wiefels, Ronald Tetzlaff, Vikas Rana, Stephan Menzel:
Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task. NANOARCH 2023: 36:1-36:7 - [c29]Christopher Bengel, Anteneh Gebregiorgis, Stephan Menzel, Rainer Waser, Georgi Gaydadjiev, Said Hamdioui:
Devices and Architectures for Efficient Computing In-Memory (CIM) Design. SAMOS 2023: 437-450 - [c28]Vasileios G. Ntinas, Dharmik Patel, Yongmin Wang, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff:
A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation. SMACD 2023: 1-4 - [e1]Ronald Tetzlaff, Fernando Corinto, Neil Kemp, Alon Ascoli, Andreas Mögel, Meng-Fan Marvin Chang, Joseph S. Friedman, Siting Liu, John Paul Strachan, Stephan Menzel, Mehdi B. Tahoori, Martin Ziegler, Jason Eshraghian, Ioannis Messaris, Christian Koitzsch, Thomas Mikolajick, Vasileios G. Ntinas:
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, NANOARCH 2023, Dresden, Germany, December 18-20, 2023. ACM 2023 [contents] - 2022
- [j16]Nils Kopperberg, Stefan Wiefels, Karl Hofmann, Jan Otterstedt, Dirk J. Wouters, Rainer Waser, Stephan Menzel:
Endurance of 2 Mbit Based BEOL Integrated ReRAM. IEEE Access 10: 122696-122705 (2022) - [j15]Mahta Mayahinia, Abhairaj Singh, Christopher Bengel, Stefan Wiefels, Muath Abu Lebdeh, Stephan Menzel, Dirk J. Wouters, Anteneh Gebregiorgis, Rajendra Bishnoi, Rajiv V. Joshi, Said Hamdioui:
A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs. ACM J. Emerg. Technol. Comput. Syst. 18(2): 32:1-32:25 (2022) - [j14]Mahdi Zahedi, Muath Abu Lebdeh, Christopher Bengel, Dirk J. Wouters, Stephan Menzel, Manuel Le Gallo, Abu Sebastian, Stephan Wong, Said Hamdioui:
MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory. ACM J. Emerg. Technol. Comput. Syst. 18(3): 44:1-44:24 (2022) - [j13]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Steve B. Furber, Emre Neftci, Franz Scherr, Wolfgang Maass, Srikanth Ramaswamy, Jonathan Tapson, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Gabriella Panuccio, Mufti Mahmud, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2022 roadmap on neuromorphic computing and engineering. Neuromorph. Comput. Eng. 2(2): 22501 (2022) - [j12]Christopher Bengel, Johannes Mohr, Stefan Wiefels, Abhairaj Singh, Anteneh Gebregiorgis, Rajendra Bishnoi, Said Hamdioui, Rainer Waser, Dirk J. Wouters, Stephan Menzel:
Reliability aspects of binary vector-matrix-multiplications using ReRAM devices. Neuromorph. Comput. Eng. 2(3): 34001 (2022) - [j11]Vasileios G. Ntinas, Alon Ascoli, Ioannis Messaris, Yongmin Wang, Vikas Rana, Stephan Menzel, Ronald Tetzlaff:
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices. IEEE Trans. Circuits Syst. II Express Briefs 69(5): 2473-2477 (2022) - [c27]Zhenming Yu, Stephan Menzel, John Paul Strachan, Emre Neftci:
Integration of Physics-Derived Memristor Models with Machine Learning Frameworks. IEEECONF 2022: 1142-1146 - [c26]Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil, Qi Shu, Peter Schüffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Krüger, Letícia Maria Bolzani Pöhls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grützmacher, Matthias Wuttig, Dirk J. Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max Christian Lemme, Rainer Leupers, Rainer Waser:
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. DATE 2022: 957-962 - [c25]Felix Staudigl, Hazem Al Indari, Daniel Schön, Dominik Sisejkovic, Farhad Merchant, Jan Moritz Joseph, Vikas Rana, Stephan Menzel, Rainer Leupers:
NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories. DATE 2022: 1181-1184 - [c24]Rana Walied Ahmad, Dirk J. Wouters, Christopher Bengel, Rainer Waser, Stephan Menzel:
Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances. ISCAS 2022: 91-95 - [c23]Yongmin Wang, Alon Ascoli, Ronald Tetzlaff, Vikas Rana, Stephan Menzel:
Performance Analysis of Memristive-CNN based on a VCM Device Model. ISCAS 2022: 1184-1188 - [c22]Christopher Bengel, Stefan Wiefels, Vikas Rana, Hsin-Yu Chen, Qing-Tai Zhao, Rainer Waser, Henriette Padberg, Fengben Xi, Stephan Menzel:
Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory. ISCAS 2022: 2792-2796 - [c21]Leon Brackmann, Atousa Jafari, Christopher Bengel, Mahta Mayahinia, Rainer Waser, Dirk J. Wouters, Stephan Menzel, Mehdi B. Tahoori:
A failure analysis framework of ReRAM In-Memory Logic operations. ITC-Asia 2022: 67-72 - [c20]Hao Cai, Ziang Chen, Xianyue Zhao, Christopher Bengel, Feng Liu, Heidemarie Schmidt, Stephan Menzel, Nan Du:
Realization of Memristor-aided Logic Gates with Analog Memristive Devices. MOCAST 2022: 1-4 - 2021
- [j10]Letícia Maria Veiras Bolzani, Moritz Fieback, Susanne Hoffmann-Eifert, Thiago Copetti, E. Brum, Stephan Menzel, Said Hamdioui, Tobias Gemmeke:
Review of Manufacturing Process Defects and Their Effects on Memristive Devices. J. Electron. Test. 37(4): 427-437 (2021) - [c19]Alon Ascoli, Ronald Tetzlaff, Stephan Menzel, Vikas Rana:
System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena. ICECS 2021: 1-6 - [c18]Konstantinos Oikonomou, Kathleen Steinhöfel, Stephan Menzel:
A Machine Learning Model for Predicting Fetal Hemoglobin Levels in Sickle Cell Disease Patients. ICICT (1) 2021: 79-91 - [c17]Christopher Bengel, Anne Siemon, Vikas Rana, Stephan Menzel:
Implementation of Multinary Łukasiewicz Logic Using Memristive Devices. ISCAS 2021: 1-5 - [i4]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Emre Neftci, Srikanth Ramaswamy, Jonathan Tapson, Franz Scherr, Wolfgang Maass, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2021 Roadmap on Neuromorphic Computing and Engineering. CoRR abs/2105.05956 (2021) - [i3]Felix Staudigl, Hazem Al Indari, Daniel Schön, Dominik Sisejkovic, Farhad Merchant, Jan Moritz Joseph, Vikas Rana, Stephan Menzel, Rainer Leupers:
NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories. CoRR abs/2112.01087 (2021) - 2020
- [j9]Tobias Ziegler, Rainer Waser, Dirk J. Wouters, Stephan Menzel:
In-Memory Binary Vector-Matrix Multiplication Based on Complementary Resistive Switches. Adv. Intell. Syst. 2(10): 2000134 (2020) - [j8]Tobias Ziegler, Rainer Waser, Dirk J. Wouters, Stephan Menzel:
In-Memory Binary Vector-Matrix Multiplication Based on Complementary Resistive Switches. Adv. Intell. Syst. 2(10): 2070100 (2020) - [j7]Christopher Bengel, Anne Siemon, Felix Cüppers, Susanne Hoffmann-Eifert, Alexander Hardtdegen, Moritz von Witzleben, Lena Hellmich, Rainer Waser, Stephan Menzel:
Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models. IEEE Trans. Circuits Syst. 67-I(12): 4618-4630 (2020) - [c16]Camilla La Torre, Andreas Kindsmüller, Seokki Son, Rainer Waser, Vikas Rana, Stephan Menzel:
A Compact Model for the Electroforming Process of Memristive Devices. ECCTD 2020: 1-4
2010 – 2019
- 2019
- [c15]Anne Siemon, Dirk J. Wouters, Said Hamdioui, Stephan Menzel:
Memristive Device Modeling and Circuit Design Exploration for Computation-in-Memory. ISCAS 2019: 1-5 - 2018
- [j6]Debjyoti Bhattacharjee, Anne Siemon, Eike Linn, Stephan Menzel, Anupam Chattopadhyay:
Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays. ACM J. Emerg. Technol. Comput. Syst. 14(2): 30:1-30:14 (2018) - [c14]Stephan Menzel, Anne Siemon, Alon Ascoli, Ronald Tetzlaff:
Requirements and Challenges for Modelling Redox-based Memristive Devices. ISCAS 2018: 1-5 - [c13]Carsten Funck, C. Baumer, Regina Dittmann, Manfred Martin, Rainer Waser, Stephan Menzel:
Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices. NVMTS 2018: 1-4 - [c12]Andreas Kindsmüller, Alexander Schönhals, Stephan Menzel, Regina Dittmann, Rainer Waser, Dirk J. Wouters:
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices. NVMTS 2018: 1-4 - 2017
- [c11]Wilhelm Stehling, Elhameh Abbaspour, Christoph Jungemann, Stephan Menzel:
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode. NVMTS 2017: 1-4 - [c10]Moritz von Witzleben, Erik Wichmann, Carsten Funck, Karsten Fleck, Rainer Waser, Ulrich Böttger, Thomas Breuer, Stephan Menzel:
Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater. NVMTS 2017: 1-5 - [c9]Stephan Menzel, Rainer Waser, Anne Siemon, Camilla La Torre, M. Schulten, Alon Ascoli, Ronald Tetzlaff:
On the origin of the fading memory effect in ReRAMs. PATMOS 2017: 1-5 - 2016
- [c8]Karsten Fleck, Ulrich Böttger, Rainer Waser, Nabeel Aslam, Susanne Hoffmann-Eifert, Stephan Menzel:
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices. ESSDERC 2016: 160-163 - [c7]Wonjoo Kim, Dirk J. Wouters, Stephan Menzel, Christian Rodenbucher, Rainer Waser, Vikas Rana:
Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices. ESSDERC 2016: 164-167 - [c6]Debjyoti Bhattacharjee, Anne Siemon, Eike Linn, Stephan Menzel, Anupam Chattopadhyay:
Efficient implementation of multiplexer and priority multiplexer using 1S1R ReRAM crossbar arrays. MWSCAS 2016: 1-4 - 2015
- [j5]Anne Siemon, Stephan Menzel, Rainer Waser, Eike Linn:
A Complementary Resistive Switch-Based Crossbar Array Adder. IEEE J. Emerg. Sel. Topics Circuits Syst. 5(1): 64-74 (2015) - [j4]Lutz Nielen, Anne Siemon, Stefan Tappertzhofen, Rainer Waser, Stephan Menzel, Eike Linn:
Study of Memristive Associative Capacitive Networks for CAM Applications. IEEE J. Emerg. Sel. Topics Circuits Syst. 5(2): 153-161 (2015) - [c5]Anne Siemon, Stephan Menzel, Rainer Waser, Eike Linn:
Controllability of multi-level states in memristive device models using a transistor as current compliance during SET operation. IJCNN 2015: 1-8 - [c4]Anne Siemon, Stephan Menzel, Anupam Chattopadhyay, Rainer Waser, Eike Linn:
In-memory adder functionality in 1S1R arrays. ISCAS 2015: 1338-1341 - 2014
- [j3]S. Ferch, Eike Linn, Rainer Waser, Stephan Menzel:
Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model. Microelectron. J. 45(11): 1416-1428 (2014) - [j2]Eike Linn, Anne Siemon, Rainer Waser, Stephan Menzel:
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(8): 2402-2410 (2014) - [c3]Anne Siemon, Stephan Menzel, Astrid Marchewka, Yoshifumi Nishi, Rainer Waser, Eike Linn:
Simulation of TaOx-based complementary resistive switches by a physics-based memristive model. ISCAS 2014: 1420-1423 - [c2]Stephan Menzel:
Modeling and simulation of electrochemical metallization memory cells. ISCAS 2014: 2025-2028 - [i2]Eike Linn, Anne Siemon, Rainer Waser, Stephan Menzel:
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices. CoRR abs/1403.5801 (2014) - [i1]Anne Siemon, Stephan Menzel, Rainer Waser, Eike Linn:
A Complementary Resistive Switch-based Crossbar Array Adder. CoRR abs/1410.2031 (2014) - 2012
- [c1]Rainer Waser, Stephan Menzel, Vikas Rana:
Recent progress in redox-based resistive switching. ISCAS 2012: 1596-1599 - 2010
- [j1]Victor V. Zhirnov, Ralph K. Cavin III, Stephan Menzel, Eike Linn, Sebastian Schmelzer, Dennis Bräuhaus, Christina Schindler, Rainer Waser:
Memory Devices: Energy-Space-Time Tradeoffs. Proc. IEEE 98(12): 2185-2200 (2010)
Coauthor Index
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