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2020 – today
- 2023
[c8]Soundarya Nagarajan
, Daniel Hiller, Ingmar Ratschinski, Joachim Knoch, Thomas Mikolajick, Jens Trommer:
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. DRC 2023: 1-2- [c7]Prafullkrishna Dani, Jochen Franz, Joachim Knoch:
Multiscale modelling of MEMS based Pirani gauges. SMACD 2023: 1-4 - [c6]Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao:
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c5]Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil, Qi Shu, Peter Schüffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Krüger, Letícia Maria Bolzani Pöhls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grützmacher, Matthias Wuttig, Dirk J. Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max Christian Lemme, Rainer Leupers, Rainer Waser:
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. DATE 2022: 957-962
2010 – 2019
- 2017
- [c4]Carmen G. Almudéver, Lingling Lao, Xiang Fu, Nader Khammassi, Imran Ashraf, Dan Iorga, Savvas Varsamopoulos, Christopher Eichler, Andreas Wallraff, Lotte Geck, Andre Kruth, Joachim Knoch, Hendrik Bluhm, Koen Bertels:
The engineering challenges in quantum computing. DATE 2017: 836-845 - [c3]Thomas Grap, Felix Riederer, Charu Gupta, Joachim Knoch:
Buried multi-gate InAs-nanowire FETs. ESSDERC 2017: 82-85 - [c2]Andreas Hessel, Stefan Scholz, Alexander Pelger, Albert Pfander, Joachim Knoch:
A novel approach for scalable sensor arrays using cantilever field-effect transistors. ESSDERC 2017: 272-275 - 2013
- [c1]Joachim Knoch, Thomas Grap, Marcel Müller:
Gate-controlled doping in carbon-based FETs. VLSI-SoC 2013: 162-167
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