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"Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and ..."

Fabrizio Masin et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764558

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

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Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS 2022: 5

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