"Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress."

M. Avramenko et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529358

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini:
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS 2024: 54

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