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"Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron ..."

A. Cavaliere et al. (2024)

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DOI: 10.1109/IRPS48228.2024.10529477

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

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A. Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS 2024: 17

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