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Journal Articles
- 2024
[j17]Yeong-Ung Kim, Won-Ju Cho
:
Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology. Sensors 24(3): 1017 (2024)- 2023
- [j16]Tae-Hwan Hyun, Won-Ju Cho:
Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors. Sensors 23(15): 6720 (2023) - 2021
- [j15]Seong-Kun Cho, Won-Ju Cho:
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor. Sensors 21(12): 4213 (2021) - [j14]Hyeong-Un Jeon, Won-Ju Cho:
Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories. Sensors 21(13): 4435 (2021) - [j13]Seong-Kun Cho, Won-Ju Cho:
Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT. Sensors 21(14): 4748 (2021) - 2018
- [j12]Eun-Ki Hong, Won-Ju Cho:
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget. Microelectron. Reliab. 80: 306-311 (2018) - [j11]Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park:
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors. Microelectron. Reliab. 88-90: 873-877 (2018) - 2017
- [j10]Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park:
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer. Microelectron. Reliab. 76-77: 327-332 (2017) - [j9]Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park:
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors. Microelectron. Reliab. 76-77: 333-337 (2017) - 2016
- [j8]Sang Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park:
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain. Microelectron. Reliab. 64: 575-579 (2016) - [j7]Jong Hoon Lee, Seul Ki Yu, Jae Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park:
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain. Microelectron. Reliab. 64: 580-584 (2016) - 2012
- [j6]Seung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park:
Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. Microelectron. Reliab. 52(9-10): 1945-1948 (2012) - [j5]Seul Ki Lee, Sung Il Hong, Yeon Ho Lee, Se Won Lee, Won-Ju Cho, Jong Tae Park:
Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics. Microelectron. Reliab. 52(9-10): 2504-2507 (2012) - 2010
- [j4]Jin-Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong Tae Park:
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs. Microelectron. Reliab. 50(9-11): 1290-1293 (2010) - 2009
- [j3]Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park:
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer. Microelectron. Reliab. 49(9-11): 994-997 (2009) - 2008
- [j2]Dong-Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim:
Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In2O3 Nano-Particles Embedded in Polyimide Insulator. IEICE Trans. Electron. 91-C(5): 747-750 (2008) - 2007
- [j1]Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong Tae Park:
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs. Microelectron. Reliab. 47(9-11): 1411-1415 (2007)
Coauthor Index
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