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Hyuntaek Jung
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2020 – today
- 2023
- [c6]Longbin Jin, Yealim Oh, Hyunseo Kim, Hyuntaek Jung, Hyo Jin Jon, Jung Eun Shin, Eun Yi Kim:
CONSEN: Complementary and Simultaneous Ensemble for Alzheimer's Disease Detection and MMSE Score Prediction. ICASSP 2023: 1-2 - [c5]Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baeck, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon:
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2018
- [c4]Artur Antonyan, Suk-Soo Pyo, Hyuntaek Jung, Taejoong Song:
Embedded MRAM Macro for eFlash Replacement. ISCAS 2018: 1-4 - [c3]Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon:
A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications. ISSCC 2018: 198-200 - 2017
- [j1]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Giyong Yang, Hoonki Kim, Sanghoon Baek, Jonghoon Jung, Bongjae Kwon, Sungwee Cho, Hyuntaek Jung, Yongjae Choo, Jaeseung Choi:
A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization. IEEE J. Solid State Circuits 52(1): 240-249 (2017) - [c2]Artur Antonyan, Suk-Soo Pyo, Hyuntaek Jung, Gwanhyeob Koh, Taejoong Song:
28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier. ISCAS 2017: 1-4 - [c1]Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi:
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis. ISSCC 2017: 208-209
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