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ORCIDNaoto Horiguchi
- > Home > Persons > Naoto Horiguchi
Publications
- 2023
[c43]Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny
, N. Horiguchi, Dimitri Linten, Ben Kaczer:
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS 2023: 1-8- 2022
- [c35]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten:
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS 2022: 5 - [c31]Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, Jo De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi:
Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits 2022: 431-432 - 2021
- [c30]Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT 2021: 1-4 - 2020
- [c28]Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer:
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS 2020: 1-6 - 2019
- [c25]Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi:
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS 2019: 1-7 - [c23]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - 2018
- [c22]Marko Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten:
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology. ESSDERC 2018: 194-197 - [c21]Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta:
New methodology for modelling MOL TDDB coping with variability. IRPS 2018: 3 - 2015
- [c13]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4
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