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Publication search results
found 95 matches
- 2024
- Shunyu Li, Guangyong Chu, Kezhen Zhu, Pengfei Niu, Shixun Zhang, Guofeng Yang:
A High Efficiency 14-28 Gb/s Tunable Receiver Analog Front-End in 65 nm CMOS Technology. J. Circuits Syst. Comput. 33(7): 2450116:1-2450116:16 (2024) - Yixin Zhou, Keping Wang, Simeng Yin, Wenyuan Li, Fanyi Meng, Zhi-Gong Wang, Kaixue Ma:
A Fully Integrated Stimulator With High Stimulation Voltage Compliance Using Dynamic Bulk Biasing Technique in a Bulk CMOS Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 71(6): 2525-2537 (2024) - Yuan He, Chengxiang Ma, Xiangchao Ma, Yilong Huang, Qianze Zheng, Yue Xi, Qiumeng Wei, Jianing Li, Xiaodong He, Yongqin Wu, Weihai Bu, Kai Zheng, Jin Kang, Jianshi Tang, Bin Gao, Dong Wu, He Qian, Huaqiang Wu:
A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology. IMW 2024: 1-4 - 2023
- Yusung Kim, Clifford Ong, Anandkumar Mahadevan Pillai, Harish Jagadeesh, Gwanghyeon Baek, Iqbal Rajwani, Zheng Guo, Eric Karl:
Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology. IEEE J. Solid State Circuits 58(4): 1087-1093 (2023) - Dana Kim, Jong-Phil Hong, Jiwon Lee, Jae-Won Nam:
High-Speed Light Detection Sensor for Hardware Security in Standard CMOS Technology. IEEE Trans. Circuits Syst. II Express Briefs 70(10): 3917-3921 (2023) - Nishant Kumar, Hari Shanker Gupta, Nilesh M. Desai, Nihar Ranjan Mohapatra:
Sub-nanosecond Delay High Voltage Level Shifter in 0.18μm HV-CMOS Technology for Cryo-Cooler Electronics. APCCAS 2023: 197-201 - Adel Mezaour, Moataz Kadry, Florian Le Goff, Denis Bourke, Thomas Finateu, Christoph Posch:
A >150dB dynamic range, enhanced input swing, high precision current mirror in 180nm CMOS technology. ISCAS 2023: 1-5 - Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi:
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits 2023: 1-2 - 2022
- Yusung Kim, Clifford Ong, Anandkumar Mahadevan Pillai, Harish Jagadeesh, Gwanghyeon Baek, Iqbal Rajwani, Zheng Guo, Eric Karl:
Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology. VLSI Technology and Circuits 2022: 212-213 - Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori:
A Cryogenic CMOS Current Comparator for Spin Qubit Readout Achieving Fast Readout Time and High Current Resolution. VLSI Technology and Circuits 2022: 234-235 - Youngmin Kim, Hongjong Park, Iljin Lee, Joonhoi Hur, Sangmin Yoo:
High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications. VLSI Technology and Circuits 2022: 124-125 - Chia-Chi Kuo, Rihito Kuroda:
A 4-Tap CMOS Time-of-Flight Image Sensor with In-pixel Analog Memory Array Achieving 10Kfps High-Speed Range Imaging and Depth Precision Enhancement. VLSI Technology and Circuits 2022: 48-49 - Hye Yeon Park, Yunki Lee, Jonghoon Park, Hyunseok Song, Taesung Lee, Hyung Keun Gweon, Yunji Jung, Jeongmin Bae, Boseong Kim, Junwon Han, Seungwon Kim, Cheolsang Yoon, Jeongki Kim, Changkeun Lee, Sehoon Yoo, Euiyeol Kim, Hyunmin Baek, Howoo Park, Bumsuk Kim, JungChak Ahn, Joonseo Yim:
Advanced novel optical stack technologies for high SNR in CMOS Image Sensor. VLSI Technology and Circuits 2022: 353-354 - Yimai Peng, Seokhyeon Jeong, Kyojin Choo, Yejoong Kim, Li-Yu Chen, Rohit Rothe, Li Xu, Ilya Gurin, Omid Oliaei, Vadim Tsinker, Stephen Bart, Peter Hartwell, David T. Blaauw, Dennis Sylvester:
A 184nW, 121µg/√Hz Noise Floor Triaxial MEMS Accelerometer with Integrated CMOS Readout Circuit and Variation-Compensated High Voltage MEMS Biasing. VLSI Technology and Circuits 2022: 84-85 - Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young:
Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing. VLSI Technology and Circuits 2022: 282-283 - Jungbin Yun, Seungjoon Lee, Seungwon Cha, Jihun Kim, Jeongho Lee, Hanseok Kim, Eungkyu Lee, Seonok Kim, Seunghan Hong, Hyungchae Kim, Jinsuk Huh, Sungchul Kim, Kazunori Kakehi, Jae-Ho Kim, June-Mo Koo, Eunsang Cho, Heegeun Jeong, Howoo Park, Kyungho Lee, JungChak Ahn, Joonseo Yim:
A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10, 000e- by Dual Vertical Transfer Gate Technology. VLSI Technology and Circuits 2022: 351-352 - Koichiro Zaitsu, Akira Matsumoto, Mizuki Nishida, Yusuke Tanaka, Hirofumi Yamashita, Yosuke Satake, Takashi Watanabe, Kunihiko Araki, Naoki Nei, Keiichi Nakazawa, Junpei Yamamoto, Mutsuo Uehara, Hiroyuki Kawashima, Yusaku Kobayashi, Tomoyuki Hirano, Keiji Tatani:
A 2-Layer Transistor Pixel Stacked CMOS Image Sensor with Oxide-Based Full Trench Isolation for Large Full Well Capacity and High Quantum Efficiency. VLSI Technology and Circuits 2022: 286-287 - 2021
- Chun-Hsing Li, Ke-Deng Huang, Te-Yen Chiu:
A Highly-Integrated Reconfigurable Ka-Band Receiver Supporting Active and Passive Detections in a 90-nm CMOS Technology. IEEE Access 9: 38342-38351 (2021) - Xiaoxu Kang, Xiaolan Zhong, Zhangfa Chen, Zhengkai Dao, Qiang Zhang, Hao Wan, Yamin Zhou, Ming Li, Yingjia Guo, Ran Nie, Tao Wu:
Development and Characterization of High Temperature Plasma Nitridation Process for Advanced CMOS Technology Application. ASICON 2021: 1-3 - David Kim, Kang-Yoon Lee:
A Design of High Power SP7T and SP8T RF Switches using SOI CMOS Technology. ISOCC 2021: 35-36 - Jong Seok Park, Sushil Subramanian, Lester Lampert, Todor Mladenov, Ilya Klotchkov, Dileep Kurian, Esdras Juárez-Hernández, Brando Perez Esparza, Sirisha Rani Kale, K. T. Asma Beevi, Shavindra P. Premaratne, Thomas Watson, Satoshi Suzuki, Mustafijur Rahman, Jaykant Timbadiya, Saksham Soni, Stefano Pellerano:
A Fully Integrated Cryo-CMOS SoC for Qubit Control in Quantum Computers Capable of State Manipulation, Readout and High-Speed Gate Pulsing of Spin Qubits in Intel 22nm FFL FinFET Technology. ISSCC 2021: 208-210 - 2020
- Imran Ali, Muhammad Asif, Khuram Shehzad, Muhammad Riaz ur Rehman, Dong Gyu Kim, Behnam Samadpoor Rikan, YoungGun Pu, Sang-Sun Yoo, Kang-Yoon Lee:
A Highly Accurate, Polynomial-Based Digital Temperature Compensation for Piezoresistive Pressure Sensor in 180 nm CMOS Technology. Sensors 20(18): 5256 (2020) - Jaekyu Lee, Seung Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, JuYoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, JinGyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang:
5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. ISSCC 2020: 102-104 - Michal Rakowski, Colleen Meagher, Karen Nummy, Abdelsalam Aboketaf, Javier Ayala, Yusheng Bian, Brendan Harris, Kate McLean, Kevin McStay, Asli Sahin, Louis Medina, Bo Peng, Zoey Sowinski, Andy Stricker, Thomas Houghton, Crystal Hedges, Ken Giewont, Ajey P. Jacob, Ted Letavic, Dave Riggs, Anthony Yu, John Pellerin:
45nm CMOS - Silicon Photonics Monolithic Technology (45CLO) for Next-Generation, Low Power and High Speed Optical Interconnects. OFC 2020: 1-3 - 2019
- Jun-Da Chen, Wen-Jun Wang:
A K-Band Low-Noise and High-Gain Down-Conversion Active Mixer Using 0.18-μm CMOS Technology. Wirel. Pers. Commun. 104(1): 407-421 (2019) - Daniel Reiter, Hao Li, Herbert Knapp, Jonas Kammerer, Jonas Fritzin, Soran Majied, Badou Sene, Nils Pohl:
A 19.5 dBm Power Amplifier with Highly Accurate 8-bit Power Controlling for Automotive Radar Applications in a 28 nm CMOS Technology. BCICTS 2019: 1-4 - Hanfeng Wang, Samira Shamsir, Ifana Mahbub, Syed K. Islam, Allen Legassey, Raja Hari Gudlavelleti, Fotios Papadimitrakopoulos, Faquir C. Jain:
Highly Linear Amperometric Glucose Detection System Realized in Deep Submicron CMOS Technology. MeMeA 2019: 1-5 - Szymon Kulis, Dongxu Yang, Datao Ghong, Jose Fonseca, Stefan Biereigel, Jingbo Ye, Paulo Moreira:
A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology. MIXDES 2019: 147-150 - Georgios Konidas, Panagiotis Gkoutis, Vasilis Kolios, Grigorios Kalivas:
A 30 GHz Low Power & High Gain Low Noise Amplifier with Gm-Boosting in 28nm FD-SOI CMOS Technology. MOCAST 2019: 1-4 - Jee Hun Yeom, Keunyeol Park, Jaehyuk Choi, Minku Song, Soo Youn Kim:
Low-Cost and High-Integration Optical Time Domain Reflectometer using CMOS Technology. PRIME 2019: 145-148
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