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ORCIDNathalie Labat
- > Home > Persons > Nathalie Labat
Publications
- 2018
[c2]Kalparupa Mukherjee
, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4- 2017
- [j32]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017) - 2016
- [j31]H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016) - 2015
- [j30]M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1672-1676 (2015) - [j29]Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou:
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. Microelectron. Reliab. 55(9-10): 1741-1745 (2015) - 2013
- [j26]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - [j25]S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013) - 2012
- [j24]Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012) - [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert:
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273 - 2009
- [j16]Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009) - 2006
- [j11]A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2003
- [j5]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003)
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