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"Comprehensive study into underlying mechanisms of anomalous gate leakage ..."

Kalparupa Mukherjee et al. (2018)

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DOI: 10.1109/IRPS.2018.8353581

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-07

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Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4

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