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"Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low ..."

S. Karboyan et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.020

access: closed

type: Journal Article

metadata version: 2020-04-16

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  - https://dblp.org/rec/journals/mr/KarboyanTRBCMLCLMRTBM13
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013)

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