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"Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si ..."

H. Lakhdhar et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.026

access: closed

type: Journal Article

metadata version: 2022-03-23

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  - https://dblp.org/rec/journals/mr/LakhdharLCDLJM16
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016)

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