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Publication search results
found 39 matches
- 2016
- Bartomeu Alorda, Cristian Carmona, Gabriel Torrens, Sebastià A. Bota:
An affordable experimental technique for SRAM write margin characterization for nanometer CMOS technologies. Microelectron. Reliab. 65: 280-288 (2016) - Fan Bu, Qing Ma, Zheyao Wang:
Delamination of bonding Interface between benzocyclobutene (BCB) and silicon dioxide/silicon nitride. Microelectron. Reliab. 65: 225-233 (2016) - Alina Caddemi, Emanuele Cardillo, Giuseppe Salvo, Salvatore Patanè:
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction. Microelectron. Reliab. 65: 310-317 (2016) - Sijie Cheng, Bimei Li, Zhongzhi Yuan, Fuyi Zhang, Jincheng Liu:
Development of a lifetime prediction model for lithium thionyl chloride batteries based on an accelerated degradation test. Microelectron. Reliab. 65: 274-279 (2016) - Xiong Du, Jun Zhang, Gaoxian Li, Heng-Ming Tai, Pengju Sun, Luowei Zhou:
Lifetime estimation for IGBT modules in wind turbine power converter system considering ambient temperature. Microelectron. Reliab. 65: 69-78 (2016) - Mengying Fan, Li Wei, Zhenzhi He, Wei Wei, Xiangning Lu:
Defect inspection of solder bumps using the scanning acoustic microscopy and fuzzy SVM algorithm. Microelectron. Reliab. 65: 192-197 (2016) - Brett Fennell, Sangil Lee, Daniel F. Baldwin:
Rotational solder self-alignment mechanics modeling for a flip chip in the presence of a viscous fluid. Microelectron. Reliab. 65: 217-224 (2016) - Chong Leong Gan, Uda Hashim:
3D Flash Memories. Microelectron. Reliab. 65: 327-328 (2016) - Elviz George, Michael G. Pecht:
RoHS compliance in safety and reliability critical electronics. Microelectron. Reliab. 65: 1-7 (2016) - Sayani Ghosh, Kalyan Koley, Chandan Kumar Sarkar:
Study of process induced variability of germanium-pTFET in analog and RF domain. Microelectron. Reliab. 65: 47-54 (2016) - A. V. Gradoboev, K. N. Orlova, I. A. Asanov, A. V. Simonova:
The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability. Microelectron. Reliab. 65: 55-59 (2016) - De-Shau Huang, Wen-Bin Tu, Xiu-Ming Zhang, Liang-Te Tsai, Ti-Yuan Wu, Ming-Tzer Lin:
Using Taguchi method to obtain the optimal design of heat dissipation mechanism for electronic component packaging. Microelectron. Reliab. 65: 131-141 (2016) - Muhammad Hafifi Hafiz Ishak, Mohd Zulkifly Abdullah, Aizat Abas:
Lattice Boltzmann method study of effect three dimensional stacking-chip package layout on micro-void formation during encapsulation process. Microelectron. Reliab. 65: 205-216 (2016) - Yeonsung Kim, Ah-Young Park, Chin-Li Kao, Michael Su, Bryan Black, Seungbae Park:
Prediction of deformation during manufacturing processes of silicon interposer package with TSVs. Microelectron. Reliab. 65: 234-242 (2016) - Chee Kuang Kok, Wen Jie Ng, Chin Chin Ooi, Kia Wai Liew:
Ball-grid-array solder joint model for assembly-level impact reliability prediction. Microelectron. Reliab. 65: 184-191 (2016) - Wiyao Kpobie, Marion Martiny, Sebastien Mercier, François Lechleiter, Laurent Bodin, Aurélien Lecavelier des Etangs-Levallois, M. Brizoux:
Thermo-mechanical simulation of PCB with embedded components. Microelectron. Reliab. 65: 108-130 (2016) - Van Nhat Le, Lahouari Benabou, Victor Etgens, Quang Bang Tao:
Finite element analysis of the effect of process-induced voids on the fatigue lifetime of a lead-free solder joint under thermal cycling. Microelectron. Reliab. 65: 243-254 (2016) - Yuan Li, Hsin-Tzu Lee, Masumi Saka:
Influence of local thermal dissipation on electromigration in an Al thin-film line. Microelectron. Reliab. 65: 178-183 (2016) - Junxing Li, Zhihua Wang, Xia Liu, Yongbo Zhang, Huimin Fu, Chengrui Liu:
A Wiener process model for accelerated degradation analysis considering measurement errors. Microelectron. Reliab. 65: 8-15 (2016) - Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng:
Charge trapping related channel modulation instability in P-GaN gate HEMTs. Microelectron. Reliab. 65: 35-40 (2016) - Hong-Zhi Lin, Yow-Jon Lin:
Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices. Microelectron. Reliab. 65: 60-63 (2016) - Lin Lin, Jun Wang, Lei Wang, Wenqi Zhang:
The stress analysis and parametric studies for the low-k layers of a chip in the flip-chip process. Microelectron. Reliab. 65: 198-204 (2016) - Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi:
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. Microelectron. Reliab. 65: 20-26 (2016) - Jamal Abdul-Kareem Mohammed:
Economical design of H-bridge multilevel inverter drive controlled by modified fast algorithm. Microelectron. Reliab. 65: 89-97 (2016) - Sami Myllymäki, Jussi Putaala, Jari Hannu, Esa Kunnari, Matti Mäntysalo:
RF measurements to pinpoint defects in inkjet-printed, thermally and mechanically stressed coplanar waveguides. Microelectron. Reliab. 65: 142-150 (2016) - Goran S. Nikolic, Mile K. Stojcev, Tatjana R. Nikolic, Branislav D. Petrovic, Goran S. Jovanovic:
Reliable data transfer Rendezvous protocol in wireless sensor networks using 2D-SEC-DED encoding technique. Microelectron. Reliab. 65: 289-309 (2016) - Segeun Park, Hyuckchai Jung, Jeonghoon Oh, Ilgweon Kim, Hyoungsun Hong, Gyoyoung Jin, Yonghan Roh:
Off-state degradation with ac bias in PMOSFET. Microelectron. Reliab. 65: 16-19 (2016) - Maran Ponnambalam, N. Vinodhkumar, R. Srinivasan, Premanand Venkatesh Chandramani:
Phase displacement study in MOSFET based ring VCOs due to heavy-ion irradiation using 3D-TCAD and circuit simulation. Microelectron. Reliab. 65: 27-34 (2016) - M. I. I. Ramli, N. Saud, M. A. A. Mohd Salleh, Mohd Nazree Derman, R. Mohd Said:
Effect of TiO2 additions on Sn-0.7Cu-0.05Ni lead-free composite solder. Microelectron. Reliab. 65: 255-264 (2016) - R. P. Shi, X. D. Huang, Johnny K. O. Sin, Pui-To Lai:
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications. Microelectron. Reliab. 65: 64-68 (2016)
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