"A comparative study on device degradation under a positive gate stress and ..."

Hyun Jun Jang et al. (2013)

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DOI: 10.1016/J.MICROREL.2013.07.005

access: closed

type: Journal Article

metadata version: 2022-10-02

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Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong Tae Park:
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors. Microelectron. Reliab. 53(9-11): 1814-1817 (2013)

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