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Journal Articles
- 2012
[j5]W. S. Lau, Peizhen Yang, S. Y. Siah, L. Chan:
The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current. Microelectron. Reliab. 52(11): 2847-2850 (2012)- 2010
- [j4]W. S. Lau, Peizhen Yang, Eng Hua Lim, Yee Ling Tang, Seow Wei Lai, V. L. Lo, S. Y. Siah, L. Chan:
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors. Microelectron. Reliab. 50(3): 346-350 (2010) - 2009
- [j3]W. S. Lau, Peizhen Yang, Jason Zhiwei Chian, V. Ho, C. H. Loh, S. Y. Siah, L. Chan:
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors. Microelectron. Reliab. 49(1): 1-7 (2009) - 2008
- [j2]W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan:
A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering. Microelectron. Reliab. 48(4): 497-503 (2008) - [j1]W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan:
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. Microelectron. Reliab. 48(10): 1641-1648 (2008)
Conference and Workshop Papers
- 2022
- [c1]Vinayak Bharat Naik, J. H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, Hongsik Yoon, Johannes Müller, Bert Pfefferling, Oliver Kallensee, Thomas Merbeth, Chim Seng Seet, J. Wong, Y. S. You, Steven Soss, T. H. Chan, S. Y. Siah:
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities. IRPS 2022: 6
Coauthor Index
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