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"An explanation of the dependence of the effective saturation velocity on ..."

W. S. Lau et al. (2008)

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DOI: 10.1016/J.MICROREL.2008.06.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan:
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. Microelectron. Reliab. 48(10): 1641-1648 (2008)

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