"A study of the linearity between Ion and log Ioff of ..."

W. S. Lau et al. (2008)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2007.10.002

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LauYEHLSVC08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LauYEHLSVC08
W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan:
A study of the linearity between I_on and log I_off of modern MOS transistors and its application to stress engineering. Microelectron. Reliab. 48(4): 497-503 (2008)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.