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Mikhail I. Vexler
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2020 – today
- 2022
- [c4]Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer:
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS 2022: 6 - [c3]Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer:
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS 2022: 11 - 2020
- [c2]Yury Yu. Illarionov
, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller
, M. I. Vexler
, N. S. Sokolov, Tibor Grasser:
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC 2020: 1-2
2010 – 2019
- 2016
- [c1]Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch
, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler
, Tibor Grasser
:
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC 2016: 428-431
2000 – 2009
- 2007
- [j5]I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler
:
Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. Microelectron. Reliab. 47(4-5): 669-672 (2007) - 2006
- [j4]M. I. Vexler
, A. El Hdiy
, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37(2): 114-120 (2006) - [j3]S. E. Tyaginov, M. I. Vexler
, A. F. Shulekin, I. V. Grekhov:
The post-damage behavior of a MOS tunnel emitter transistor. Microelectron. Reliab. 46(7): 1035-1041 (2006) - 2004
- [j2]R. Khlil, A. El Hdiy
, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler
:
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectron. Reliab. 44(3): 543-546 (2004) - 2001
- [j1]N. Asli, M. I. Vexler
, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht:
Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectron. Reliab. 41(7): 1071-1076 (2001)
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