"Tunnel charge transport within silicon in reversely-biased MOS tunnel ..."

M. I. Vexler et al. (2006)

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DOI: 10.1016/J.MEJO.2005.04.048

access: closed

type: Journal Article

metadata version: 2022-10-02

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M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37(2): 114-120 (2006)

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