Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Tunnel charge transport within silicon in reversely-biased MOS tunnel ..."

M. I. Vexler et al. (2006)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2005.04.048

access: closed

type: Journal Article

metadata version: 2022-10-02

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/VexlerHGTKMSG06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/VexlerHGTKMSG06
M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37(2): 114-120 (2006)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.