"The post-damage behavior of a MOS tunnel emitter transistor."

S. E. Tyaginov et al. (2006)

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DOI: 10.1016/J.MICROREL.2005.10.006

access: closed

type: Journal Article

metadata version: 2022-10-02

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S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov:
The post-damage behavior of a MOS tunnel emitter transistor. Microelectron. Reliab. 46(7): 1035-1041 (2006)

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