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Abhitosh Vais
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2020 – today
- 2022
- [c5]Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert:
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. ESSDERC 2022: 261-264 - 2021
- [c4]Abhitosh Vais
, Brent Hsu, Olga Syshchyk
, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert:
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. IRPS 2021: 1-5
2010 – 2019
- 2018
- [c3]Vamsi Putcha, Jacopo Franco, Abhitosh Vais
, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
:
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS 2018: 5 - 2016
- [c2]Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers
, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais
, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke
, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean:
Beyond-Si materials and devices for more Moore and more than Moore applications. ICICDT 2016: 1-5 - 2015
- [c1]Abhitosh Vais
, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken
, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - 2014
- [j1]Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
:
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures. Microelectron. Reliab. 54(4): 746-754 (2014)
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