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ORCIDLuigi Dilillo
- > Home > Persons > Luigi Dilillo
Publications
- 2014
[j14]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Arnaud Virazel
, Nabil Badereddine:
On the Test and Mitigation of Malfunctions in Low-Power SRAMs. J. Electron. Test. 30(5): 611-627 (2014)- 2013
- [c64]Elena I. Vatajelu, Luigi Dilillo, Alberto Bosio, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Adaptive Source Bias for Improved Resistive-Open Defect Coverage during SRAM Testing. Asian Test Symposium 2013: 109-114 - [c63]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Test solution for data retention faults in low-power SRAMs. DATE 2013: 442-447 - [c61]Elena I. Vatajelu, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Analyzing the effect of concurrent variability in the core cells and sense amplifiers on SRAM read access failures. DTIS 2013: 39-44 - [c59]Elena I. Vatajelu, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Analyzing resistive-open defects in SRAM core-cell under the effect of process variability. ETS 2013: 1-6 - [c56]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
On the reuse of read and write assist circuits to improve test efficiency in low-power SRAMs. ITC 2013: 1-10 - [c53]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
A built-in scheme for testing and repairing voltage regulators of low-power srams. VTS 2013: 1-6 - 2012
- [j7]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. J. Electron. Test. 28(3): 317-329 (2012) - [c45]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Defect analysis in power mode control logic of low-power SRAMs. ETS 2012: 1 - [c43]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Low-power SRAMs power mode control logic: Failure analysis and test solutions. ITC 2012: 1-10 - 2011
- [c38]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Aida Todri, Arnaud Virazel, Nabil Badereddine:
Failure Analysis and Test Solutions for Low-Power SRAMs. Asian Test Symposium 2011: 459-460 - [c35]Leonardo Bonet Zordan, Alberto Bosio, Luigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Optimized march test flow for detecting memory faults in SRAM devices under bit line coupling. DDECS 2011: 353-358 - [c31]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
On using address scrambling to implement defect tolerance in SRAMs. ITC 2011: 1-8 - 2010
- [c26]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
A statistical simulation method for reliability analysis of SRAM core-cells. DAC 2010: 853-856 - [c24]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM Core-Cell. DELTA 2010: 265-269 - [c22]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. ETS 2010: 132-137 - [c21]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Setting test conditions for improving SRAM reliability. ETS 2010: 257 - [c16]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Detecting NBTI induced failures in SRAM core-cells. VTS 2010: 75-80
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