- Z. Geng, W. Kinberger, Ralf Granzner, J. Pezoldt, Frank Schwierz:
2D electronics - opportunities and limitations. ESSDERC 2016: 230-235 - Gérard Ghibaudo:
Electrical characterization of FDSOI CMOS devices. ESSDERC 2016: 135-141 - C. H. De Groot, Long Tao Dong, A. Usgaocar, V. M. C. Chavagnac:
Composition-modulated electrodeposited PdNi-Si hydrogen sensors for low power applications. ESSDERC 2016: 276-279 - D. Grutzmacher, Martin Mikulics, Hilde Hardtdegen:
Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structures. ESSDERC 2016: 327-329 - Navneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel:
16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcell. ESSDERC 2016: 356-359 - Md Abdullah Al Hafiz, Lakshmoji Kosuru, Mohammad Ibrahim Younis, Hossein Fariborzi:
Microelectromechanical resonator based digital logic elements. ESSDERC 2016: 448-451 - Jin-Woo Han, Victor Moroz, Andrey Kucherov, Dinesh Maheshwari, Valentin Abramzon, Zvi Or-Bach, Yoshio Nishi, Yuniarto Widjaja:
A CMOS-compatible boosted transistor having >2× drive current and low leakage current. ESSDERC 2016: 214-217 - Mutsuko Hatano, Takayuki Iwasaki, Satoshi Yamasaki, Toshiharu Makino:
Diamond electronics. ESSDERC 2016: 330-332 - Raheleh Hedayati, Luigia Lanni, Ana Rusu, Carl-Mikael Zetterling:
Wide temperature range integrated amplifier in bipolar 4H-SiC technology. ESSDERC 2016: 198-201 - Christofer Hierold, Kiran Chikkadi, Miroslav Haluska, Cosmin Roman:
Ultra low power NO2 gas sensors based on suspended CNFETs. ESSDERC 2016: 272-275 - Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459 - Mario Iannazzo, Eduard Alarcón, Himadri Pandey, Vikram Passi, Max Christian Lemme:
CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancement. ESSDERC 2016: 244-247 - Ki-Sik Im, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Sindhuri Vodapally, Yong Soo Lee, Jung-Hee Lee, Yong-Tae Kim, Sorin Cristoloveanu:
Novel AlGaN/GaN omega-FinFETs with excellent device performances. ESSDERC 2016: 323-326 - Francesco Ivaldi, Tomasz Bieniek, Pawel Janus, Jerzy Zajac, Piotr Grabiec, Wojciech Majstrzyk, D. Kopiec, Teodor P. Gotszalk:
New approach for a multi-cantilever arrays sensor system with advanced MOEMS readout. ESSDERC 2016: 444-447 - Hiroshi Iwai:
End of the downsizing and world after that. ESSDERC 2016: 121-126 - Jinfeng Kang, Peng Huang, Zhe Chen, Yudi Zhao, Chen Liu, Runze Han, Lifeng Liu, Xiaoyan Liu, Yangyuan Wang, Bin Gao:
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. ESSDERC 2016: 154-159 - Siegfried F. Karg, Vanessa Schaller, Andrew Gaul, Kirsten E. Moselund, Heinz Schmid, Bernd Gotsmann, Johannes Gooth, Heike Riel:
Ballistic transport and high thermopower in one-dimensional InAs nanowires. ESSDERC 2016: 341-344 - Takamasa Kawanago, Ryo Ikoma, Du Wanjing, Shunri Oda:
Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics. ESSDERC 2016: 291-294 - Wonjoo Kim, Dirk J. Wouters, Stephan Menzel, Christian Rodenbucher, Rainer Waser, Vikas Rana:
Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices. ESSDERC 2016: 164-167 - R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC 2016: 142-145 - Chang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao:
Si n-TFETs on ultra thin body with suppressed ambipolarity. ESSDERC 2016: 408-411 - Laurent Malier, Andreia Cathelin, Giorgio Cesana, Laurent Le Pailleur:
Low power advanced digital technologies to enable Internet of Things. ESSDERC 2016: 15-16 - Nikolaos Mavredakis, Matthias Bucher:
Compact model for variability of low frequency noise due to number fluctuation effect. ESSDERC 2016: 464-467 - Hiroshi Mizuta, Jian Sun, Manoharan Muruganathan:
Novel suspended graphene devices for extreme sensing. ESSDERC 2016: 268-271 - Clara F. Moldovan, Wolfgang A. Vitale, Michele Tamagnone, Juan R. Mosig, Adrian M. Ionescu:
Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs. ESSDERC 2016: 345-348 - Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy:
Physics-based electrical compact model for monolayer Graphene FETs. ESSDERC 2016: 240-243 - Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue:
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC 2016: 424-427 - C. Mukherjee, Thomas Jacquet, Thomas Zimmer, Cristell Maneux, Anjan Chakravorty, Josef Boeck, Klaus Aufinger:
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. ESSDERC 2016: 260-263 - Muhammad Nawaz, Kalle Ilves:
Replacing Si to SiC: Opportunities and challenges. ESSDERC 2016: 472-475