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2020 – today
- 2020
[j6]Chuan Xu, Seshadri K. Kolluri, Kazuhiko Endo
, Kaustav Banerjee:
Correction to "Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability". IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(1): 277 (2020)- [c13]Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo:
Analysis of charge-to-hot-carrier degradation in Ge pFinFETs. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c12]Kazuhiko Endo:
Post-Si Nano Device Technology. ASICON 2019: 1 - 2017
- [c11]Kazuhiko Endo:
Advanced FinFET technologies for boosting SRAM performance. ASICON 2017: 1141-1144 - 2015
- [c10]Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara:
PBTI for N-type tunnel FinFETs. ICICDT 2015: 1-4 - 2014
- [c9]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC 2014: 182-185 - [c8]Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota:
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC 2014: 278-281 - 2013
- [j5]Kazuhiko Endo, Shin-ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara:
Independent-Double-Gate FinFET SRAM Technology. IEICE Trans. Electron. 96-C(4): 413-423 (2013) - [j4]Chuan Xu, Seshadri K. Kolluri, Kazuhiko Endo, Kaustav Banerjee:
Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32(7): 1045-1058 (2013) - [c7]Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota:
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC 2013: 45-48 - [c6]Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota:
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC 2013: 202-205 - 2012
- [j3]Shin-ichi O'Uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara:
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology. IEICE Trans. Electron. 95-C(4): 686-695 (2012) - [j2]Hideo Sakai, Shin-ichi O'Uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro:
High-Frequency Precise Characterization of Intrinsic FinFET Channel. IEICE Trans. Electron. 95-C(4): 752-760 (2012) - 2010
- [c5]Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara:
Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET. CICC 2010: 1-4 - [c4]Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara:
0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits. ESSCIRC 2010: 474-477 - [c3]Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee:
Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design. ICCAD 2010: 714-720
2000 – 2009
- 2009
- [c2]Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee:
Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization. ICCAD 2009: 505-512 - 2008
- [j1]Shin-ichi O'Uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki:
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction. IEICE Trans. Electron. 91-C(4): 534-542 (2008) - 2007
- [c1]Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki:
Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology. CICC 2007: 33-36
Coauthor Index
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