"Independent-Double-Gate FinFET SRAM Technology."

Kazuhiko Endo et al. (2013)

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DOI: 10.1587/TRANSELE.E96.C.413

access: closed

type: Journal Article

metadata version: 2020-04-11

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  - https://dblp.org/rec/journals/ieicet/EndoOMLM13
Kazuhiko Endo, Shin-ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara:
Independent-Double-Gate FinFET SRAM Technology. IEICE Trans. Electron. 96-C(4): 413-423 (2013)

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