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Bing-Liang Yang

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2010 – 2019

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2011
[j5]
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  - journals/mr/TamSYKW11
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  - https://dblp.org/rec/journals/mr/TamSYKW11
Wing-Shan Tam, Sik-Lam Siu, Bing-Liang Yang, Chi-Wah Kok, Hei Wong:
Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation. Microelectron. Reliab. 51(12): 2064-2068 (2011)

2000 – 2009

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2008
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Banani Sen, Bing-Liang Yang, Hei Wong, Chi-Wah Kok, P. K. Chu, A. Huang:
Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation. Microelectron. Reliab. 48(11-12): 1765-1768 (2008)
2006
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Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai:
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. Microelectron. Reliab. 46(12): 2044-2048 (2006)
2004
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Bing-Liang Yang, P. T. Lai, Hei Wong:
Conduction mechanisms in MOS gate dielectric films. Microelectron. Reliab. 44(5): 709-718 (2004)
2002
[j1]
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  - journals/mr/YangCDSWLC02
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Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong, P. T. Lai, Y. C. Cheng:
Ultra-shallow n⁺p junction formed by PH₃ and AsH₃ plasma immersion ion implantation. Microelectron. Reliab. 42(12): 1985-1989 (2002)

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