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2010 – 2019
- 2015
[j14]Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière
, Bertrand Boudart:
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1719-1723 (2015)- 2013
- [j13]Amrane Oukaour, Mathieu Pouliquen, Boubekeur Tala-Ighil, Hamid Gualous, Eric Pigeon, Olivier Gehan, Bertrand Boudart:
Supercapacitors aging diagnosis using least square algorithm. Microelectron. Reliab. 53(9-11): 1638-1642 (2013) - 2012
- [j12]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectron. Reliab. 52(9-10): 2159-2163 (2012) - [j11]Hamid Gualous, Roland Gallay, Monzer Al Sakka, Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Boudart:
Calendar and cycling ageing of activated carbon supercapacitor for automotive application. Microelectron. Reliab. 52(9-10): 2477-2481 (2012) - 2011
- [j10]Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart:
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. Microelectron. Reliab. 51(2): 386-391 (2011) - [j9]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectron. Reliab. 51(9-11): 1796-1800 (2011) - [j8]Boubekeur Tala-Ighil, Amrane Oukaour, Hamid Gualous, Bertrand Boudart, Bertrand Pouderoux, Jean-Lionel Trolet, Marc Piccione:
Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour. Microelectron. Reliab. 51(9-11): 2010-2014 (2011) - 2010
- [j7]Hamid Gualous, Roland Gallay, G. Alcicek, Boubekeur Tala-Ighil, Amrane Oukaour, Bertrand Boudart, Philippe Makany:
Supercapacitor ageing at constant temperature and constant voltage and thermal shock. Microelectron. Reliab. 50(9-11): 1783-1788 (2010) - [j6]M. Tounsi, Amrane Oukaour, Boubekeur Tala-Ighil, Hamid Gualous, Bertrand Boudart, Djamil Aïssani:
Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature. Microelectron. Reliab. 50(9-11): 1810-1814 (2010)
2000 – 2009
- 2006
- [j5]Yannick Guhel, Bertrand Boudart, E. Delos, Marianne Germain, Z. Bougrioua:
Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N. Microelectron. Reliab. 46(5-6): 786-793 (2006) - 2005
- [j4]Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress. Microelectron. Reliab. 45(9-11): 1728-1731 (2005) - 2004
- [j3]Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni:
Hot carrier aging degradation phenomena in GaN based MESFETs. Microelectron. Reliab. 44(9-11): 1375-1380 (2004) - [j2]Cheick Oumar Maïga, Hamid Toutah, Boubekeur Tala-Ighil, Bertrand Boudart:
Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress. Microelectron. Reliab. 44(9-11): 1461-1465 (2004) - 2003
- [j1]Hamid Toutah, Boubekeur Tala-Ighil, Jean-François Llibre, Bertrand Boudart, Taieb Mohammed-Brahim, Olivier Bonnaud:
Degradation in polysilicon thin film transistors related to the quality of the polysilicon material. Microelectron. Reliab. 43(9-11): 1531-1535 (2003)
Coauthor Index
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