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Sean J. O'Shea
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Journal Articles
- 2016
- [j5]Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM. Microelectron. Reliab. 64: 172-178 (2016) - [j4]Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight. Microelectron. Reliab. 64: 204-209 (2016) - 2015
- [j3]Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey:
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis. Microelectron. Reliab. 55(9-10): 1450-1455 (2015) - 2014
- [j2]Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey:
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer. Microelectron. Reliab. 54(9-10): 1712-1717 (2014) - 2007
- [j1]Arijit Roy, Cher Ming Tan, Sean J. O'Shea, Kedar Hippalgaonkar, Wulf Hofbauer:
Room temperature observation of point defect on gold surface using thermovoltage mapping. Microelectron. Reliab. 47(9-11): 1580-1584 (2007)
Conference and Workshop Papers
- 2020
- [c3]Alok Ranjan, Sean J. O'Shea, Michel Bosman, J. Molina, Nagarajan Raghavan, Kin Leong Pey:
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films. IRPS 2020: 1-7 - 2019
- [c2]Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea:
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns. IRPS 2019: 1-12 - 2018
- [c1]Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey:
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics. IRPS 2018: 4
Coauthor Index
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