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Alexandre Sarafianos
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2020 – today
- 2022
- [j5]Davide Poggi
, Thomas Ordas
, Alexandre Sarafianos, Philippe Maurine
:
Checking Robustness Against EM Side-Channel Attacks Prior to Manufacturing. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 41(5): 1264-1275 (2022) - 2021
- [c10]Davide Poggi, Philippe Maurine, Thomas Ordas, Alexandre Sarafianos:
Protecting Secure ICs Against Side-Channel Attacks by Identifying and Quantifying Potential EM and Leakage Hotspots at Simulation Stage. COSADE 2021: 129-147 - 2020
- [i1]Davide Poggi, Philippe Maurine, Thomas Ordas, Alexandre Sarafianos, Jérémy Raoult:
Finding EM leakages at design stage: a simulation methodology. IACR Cryptol. ePrint Arch. 2020: 1198 (2020)
2010 – 2019
- 2015
- [j4]Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe
, Mathieu Lisart, Jean-Max Dutertre
, Alexandre Sarafianos:
Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation. Microelectron. Reliab. 55(9-10): 1592-1599 (2015) - [c9]Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe
, Mathieu Lisart, Alexandre Sarafianos, Jean-Max Dutertre
:
Influence of triple-well technology on laser fault injection and laser sensor efficiency. DFTS 2015: 85-90 - [c8]Clement Champeix, Nicolas Borrel, Jean-Max Dutertre
, Bruno Robisson
, Mathieu Lisart, Alexandre Sarafianos:
SEU sensitivity and modeling using pico-second pulsed laser stimulation of a D Flip-Flop in 40 nm CMOS technology. DFTS 2015: 177-182 - [c7]Marc Lacruche, Nicolas Borrel, Clement Champeix, Cyril Roscian, Alexandre Sarafianos, Jean-Baptiste Rigaud
, Jean-Max Dutertre
, Edith Kussener:
Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses. IOLTS 2015: 13-18 - [c6]Clement Champeix, Nicolas Borrel, Jean-Max Dutertre
, Bruno Robisson
, Mathieu Lisart, Alexandre Sarafianos:
Experimental validation of a Bulk Built-In Current Sensor for detecting laser-induced currents. IOLTS 2015: 150-155 - [c5]Nicolas Borrel, Clement Champeix, Mathieu Lisart, Alexandre Sarafianos, Edith Kussener, Wenceslas Rahajandraibe
, Jean-Max Dutertre
:
Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation. IRPS 2015: 1 - 2014
- [j3]Jean-Max Dutertre
, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale, Alexandre Sarafianos:
Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS. Microelectron. Reliab. 54(9-10): 2289-2294 (2014) - [c4]Jean-Max Dutertre
, Stephan De Castro, Alexandre Sarafianos, Noemie Boher, Bruno Rouzeyre, Mathieu Lisart, Joel Damiens, Philippe Candelier, Marie-Lise Flottes, Giorgio Di Natale:
Laser attacks on integrated circuits: From CMOS to FD-SOI. DTIS 2014: 1-6 - [c3]Régis Leveugle, Paolo Maistri, Pierre Vanhauwaert, Feng Lu, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre, Athanasios Papadimitriou
, David Hély
, Vincent Beroulle, Guillaume Hubert
, Stephan De Castro, Jean-Max Dutertre
, Alexandre Sarafianos, Noemie Boher, Mathieu Lisart, Joel Damiens, Philippe Candelier, Clément Tavernier:
Laser-induced fault effects in security-dedicated circuits. VLSI-SoC 2014: 1-6 - 2013
- [j2]Alexandre Sarafianos, Cyril Roscian, Jean-Max Dutertre
, Mathieu Lisart, Assia Tria:
Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell. Microelectron. Reliab. 53(9-11): 1300-1305 (2013) - [c2]Alexandre Sarafianos, Mathieu Lisart, Olivier Gagliano, Valerie Serradeil, Cyril Roscian, Jean-Max Dutertre
, Assia Tria:
Robustness improvement of an SRAM cell against laser-induced fault injection. DFTS 2013: 149-154 - [c1]Cyril Roscian, Alexandre Sarafianos, Jean-Max Dutertre
, Assia Tria:
Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells. FDTC 2013: 89-98 - 2012
- [j1]Alexandre Sarafianos, Roxane Llido, Jean-Max Dutertre
, Olivier Gagliano, Valerie Serradeil, Mathieu Lisart, Vincent Goubier, Assia Tria, Vincent Pouget, Dean Lewis:
Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology. Microelectron. Reliab. 52(9-10): 2035-2038 (2012)
Coauthor Index
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