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Publication search results
found 117 matches
- 2018
- Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye:
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. DRC 2018: 1-2 - Abdullah Alharbi, Davood Shahrjerdi:
Variability in synthetic MoS2 devices: Effect of the growth substrate. DRC 2018: 1-2 - K. R. Khiangte Amlta, A. Laha, S. Mahapatra, U. Gangway:
Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI. DRC 2018: 1-2 - Ahmedullah Aziz, Roman Engel-Herbert, Sumeet Kumar Gupta, Nikhil Shukla:
A Three-Terminal Edge-Triggered Mott Switch. DRC 2018: 1-2 - Ahmedullah Aziz, Nikhil Shukla, Alan C. Seabaugh, Suman Datta, Sumeet Gupta:
Cockcroft-Walton Multiplier based on Unipolar Ag/HfO2/Pt Threshold Switch. DRC 2018: 1-2 - B. Jayant Baliga:
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization. DRC 2018: 1-2 - Shubhadeep Bhattacharjee, Pranandita Biswas, Swan Solanke, Rangarajan Muralidharan, Digbijoy Nath, Navakanta Bhat:
Optoelectronics based on Vertical Transport in Multi-layer MoS2. DRC 2018: 1-2 - Shubhadeep Bhattacharjee, K. L. Ganapathi, S. Mohan, Navakanta Bhat:
High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts. DRC 2018: 1-2 - Jasper Bizindavyi, Anne S. Verhulst, Bart Soree, Guido Groeseneken:
Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. DRC 2018: 1-2 - Stephanie M. Bohaichuk, Miguel Munoz-Rojo, Gregory Pitner, Connor McClellan, Feifei Lian, Jason Li, Jaewoo Jeong, Mahesh Samant, Stuart Parkin, H.-S. Philip Wong, Eric Pop:
Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters. DRC 2018: 1-2 - Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, Taiichi Otsuji:
Graphene-Channel-Transistor Terahertz Amplifier. DRC 2018: 1-2 - Nikita A. Butakov, Mark Knight, Tomer Lewi, Prasad P. Iyer, Hamid Chorsi, Javier del Valle Granda, Yoav Kalcheim, Phillip Hon, Ivan K. Schuller, Jon A. Schuller:
Electrically Switchable Infrared Nanophotonic Devices with VO2. DRC 2018: 1-2 - Joshua D. Caldwell:
Approaches for Dynamic IR N ano-Optics using 2D Materials. DRC 2018: 1-2 - Jorge A. Cardenas, Sophia Upshaw, Matthew J. Catenaccr, Benjamin J. Wiley, Aaron D. Franklin:
Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film Transistors. DRC 2018: 1-2 - P. J. Cegielski, S. Neutzner, C. Porschatis, M. Gandini, Daniel Schall, Carlo Andrea Riccardo Perini, Jens Bolten, Stephan Suckow, B. Chmielak, A. Petrozza, Thorsten Wahlbrink, Max C. Lemme, Anna Lena Giesecke:
Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform. DRC 2018: 1-2 - Alexander Chaney, Henryk Turski, Kazuki Nomoto, Qingxiao Wang, Zongyang Hu, Moon J. Kim, Huili Grace Xing, Debdeep Jena:
Realization of the First GaN Based Tunnel Field-Effect Transistor. DRC 2018: 1-3 - Dibyendu Chatterjee, Anil Kottantharayil:
An Improved 1T-DRAM Cell Using TiO2as the Source and Drain of an n-Channel PD-SOI MOSFET. DRC 2018: 1-2 - Tanmay Chavan, S. Dutta, Nihar R. Mohapatra, Udayan Ganguly:
An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS Technology. DRC 2018: 1-2 - Ying-Chen Chen, Xiaohan Wu, Yao-Feng Chang, Jack C. Lee:
Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications. DRC 2018: 1-2 - Wonil Chung, Mengwei Si, Peide D. Ye:
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. DRC 2018: 1-2 - Isha M. Datye, Miguel Munoz-Rojo, Eilam Yalon, Michal J. Mleczko, Eric Pop:
Localized Heating in Mo'I'ei-Based Resistive Memory Devices. DRC 2018: 1-2 - Punyashloka Debashis, Zhihong Chen:
Tunable Random Number Generation Using Single Superparamagnet with Perpendicular Magnetic Anisotropy. DRC 2018: 1-2 - Nishita Deka, Vivek Subramanian:
First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications. DRC 2018: 1-2 - Sanchit Deshmukh, Miguel Munoz-Rojo, Eilam Yalon, Sam Vaziri, Eric Pop:
Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry. DRC 2018: 1-2 - E. A. Douglas, B. A. Klein, A. A. Allerman, Albert G. Baca, T. R. Fortune, A. M. Armstrong:
Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate. DRC 2018: 1-2 - D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy:
2D RF Electronics: from devices to circuits - challenges and applications. DRC 2018: 1-2 - Yihao Fang, Jonathan P. Sculley, Miguel E. Urteaga, Andy D. Carter, Paul D. Yoder, Mark J. W. Rodwell:
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers. DRC 2018: 1-2 - Elvira Fortunato, Diana Gaspar, Inês Cunha, Manuel Mendes, Antonio Vicente, Hugo Águas, Ana Carolina Marques, Ana Pimentel, Daniela Nunes, Luís Pereira, Rodrigo Martins:
Paper electronics: a sustainable multifunctional platform. DRC 2018: 1-2 - Cameron J. Foss, Zlatan Aksamija:
Quantifying the thermal boundary conductance of 2D-substrate interfaces. DRC 2018: 1-2 - J. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang:
GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. DRC 2018: 1-2
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