- 2016
- Gina C. Adam, Brian D. Hoskins, Mirko Prezioso, Farnood Merrikh-Bayat, Bhaswar Chakrabarti, Dmitri B. Strukov:
Highly-uniform multi-layer ReRAM crossbar circuits. ESSDERC 2016: 436-439 - Moshe Agam, Jaroslav Pjencak, Dusan Prejda, Agajan Suwhanov, Thierry Yao, Ladislav Seliga:
Management of parasitic bipolars in modular high power LDMOS technology. ESSDERC 2016: 303-306 - Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta:
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. ESSDERC 2016: 264-267 - Anant Agarwal, Laura Marlino, Robert Ivester, Mark Johnson:
Wide Bandgap power devices and applications; the U.S. initiative. ESSDERC 2016: 206-209 - Cem Alper, Jose L. Padilla, Pierpaolo Palestri, Adrian M. Ionescu:
Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET. ESSDERC 2016: 307-310 - Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen:
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. ESSDERC 2016: 202-205 - Viorel Avramescu, Andrea De Luca, Mihai Brezeanu, Syed Zeeshan Ali, Florin Udrea, Octavian Buiu, Cornel Cobianu, Bogdan-Catalin Serban, Julian W. Gardner, Viorel Dumitru, Alisa Stratulat:
CMOS-compatible SOI micro-hotplate-based oxygen sensor. ESSDERC 2016: 280-283 - B. Jayant Baliga:
SiC power devices: From conception to social impact. ESSDERC 2016: 192-197 - M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez, F. Mazen, E. Vilain, M. Guillermet, Simon Jeannot, Elisa Vianello, Luca Perniola:
Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. ESSDERC 2016: 168-171 - R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond:
Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. ESSDERC 2016: 127-130 - Melanie Brocard, Guillaume Berhault, Sébastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, Joris Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint:
Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. ESSDERC 2016: 218-221 - Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419 - Hamilton Carrillo-Nunez, Reto Rhyner, Mathieu Luisier, Andreas Schenk:
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs. ESSDERC 2016: 188-191 - Yangyin Chen, Chris Petti:
ReRAM technology evolution for storage class memory application. ESSDERC 2016: 432-435 - Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean:
Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC 2016: 131-134 - M. F. Chowdhury, Syed Zeeshan Ali, S. Boual, Richard Hopper, Florin Udrea:
Development of plasmonic MEMS CMOS infrared sensors for occupancy detection. ESSDERC 2016: 97-100 - Ales Chvála, Juraj Marek, Patrik Pribytny, Daniel Donoval:
Advanced 3-D device and circuit electrothermal simulations of power integrated circuit. ESSDERC 2016: 468-471 - Nicola Ciocchini, Mario Laudato, Andrea L. Lacaita, Daniele Ielmini, Mattia Boniardi, Enrico Varesi, Paolo Fantini:
Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability. ESSDERC 2016: 377-380 - Dana Cristea, Paula Obreja, Rebeca Tudor, Bogdan Bita:
Solution processable PbS quantum dots/silicon multispectral detectors. ESSDERC 2016: 105-108 - Sorin Cristoloveanu, Maryline Bawedin:
FDSOI devices: Issues and innovative solutions. ESSDERC 2016: 117-120 - Hassan El Dirani, Pascal Fonteneau, Yohann Solaro, Philippe Ferrari, Sorin Cristoloveanu:
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes. ESSDERC 2016: 210-213 - Gabriel Droulers, Serge Ecoffey, Dominique Drouin, Michel Pioro-Ladriere:
A manufacturable process for single electron charge detection, a step towards quantum computing. ESSDERC 2016: 337-340 - Dumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov, Andras Kis:
High-quality synthetic 2D transition metal dichalcogenide semiconductors. ESSDERC 2016: 284-286 - Axel Erlebach, K. H. Lee, Fabian M. Bufler:
Empirical ballistic mobility model for drift-diffusion simulation. ESSDERC 2016: 420-423 - Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder:
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC 2016: 369-372 - Andrea Ficorella, Lucio Pancheri, Gian-Franco Dalla Betta, Paolo Brogi, Gianmaria Collazuol, Pier Simone Marrocchesi, Fabio Morsani, Lodovico Ratti, Aurore Savoy-Navarro:
Crosstalk mapping in CMOS SPAD arrays. ESSDERC 2016: 101-104 - Karsten Fleck, Ulrich Böttger, Rainer Waser, Nabeel Aslam, Susanne Hoffmann-Eifert, Stephan Menzel:
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices. ESSDERC 2016: 160-163 - Manuel Le Gallo, Tomas Tuma, Federico Zipoli, Abu Sebastian, Evangelos Eleftheriou:
Inherent stochasticity in phase-change memory devices. ESSDERC 2016: 373-376 - Erick Garcia Cordero, Hoel Guerin, Amira Muhech, Francesco Bellando, Adrian M. Ionescu:
Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode. ESSDERC 2016: 452-455