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"An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM."

Randy W. Mann et al. (2019)

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DOI: 10.1109/TVLSI.2019.2907594

access: closed

type: Journal Article

metadata version: 2020-03-11

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  - https://dblp.org/rec/journals/tvlsi/MannZPGARPVHC19
Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter:
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 27(8): 1819-1827 (2019)

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