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Paul R. Chalker
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Journal Articles
- 2007
- [j4]Y. V. Gomeniuk, A. N. Nazarov, Ya. N. Vovk, V. S. Lysenko, Yi Lu, Octavian Buiu
, Steve Hall, R. J. Potter, Paul R. Chalker
:
Charge trapping and interface states in hydrogen annealed HfO2-Si structures. Microelectron. Reliab. 47(4-5): 714-717 (2007) - [j3]Y. Lu, Octavian Buiu
, Steve Hall, Ivona Z. Mitrovic
, W. Davey, R. J. Potter, Paul R. Chalker
:
Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. Microelectron. Reliab. 47(4-5): 722-725 (2007) - [j2]I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu
, Y. Lu, Richard Potter
, Paul R. Chalker
:
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures. Microelectron. Reliab. 47(4-5): 726-728 (2007) - [j1]P. Taechakumput, S. Taylor, Octavian Buiu
, R. J. Potter, Paul R. Chalker
, A. C. Jones:
Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. Microelectron. Reliab. 47(4-5): 825-829 (2007)
Conference and Workshop Papers
- 2019
- [c3]Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker:
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT 2019: 1-5 - [c2]Miao Cui, Yutao Cai, Qinglei Bu
, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao:
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. ICICDT 2019: 1-4 - 2015
- [c1]A. Shaw, T. J. Whittles, Ivona Z. Mitrovic
, J. D. Jin, J. S. Wrench, D. Hesp, V. R. Dhanak, Paul R. Chalker
, Steve Hall:
Physical and electrical characterization of Mg-doped ZnO thin-film transistors. ESSDERC 2015: 206-209
Coauthor Index
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