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Sima Dimitrijev
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2020 – today
- 2023
- [j18]Vikas Joshi
, Utkarsh Jadli
, Peyush Pande
, Mayank Chaturvedi
, Daniel Haasmann
, Sima Dimitrijev
:
Circuit-Specific and Technology-Independent Criterion for Selection of Power MOSFETs That Minimize Energy Dissipation. IEEE Access 11: 116472-116479 (2023) - 2021
- [j17]Mayank Chaturvedi
, Sima Dimitrijev
, Hamid Amini Moghadam, Daniel Haasmann
, Peyush Pande, Utkarsh Jadli
:
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method. IEEE Access 9: 109745-109753 (2021) - 2020
- [j16]Utkarsh Jadli
, Faisal Mohd-Yasin
, Hamid Amini Moghadam
, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev:
The Correct Equation for the Current Through Voltage-Dependent Capacitors. IEEE Access 8: 98038-98043 (2020) - [j15]Utkarsh Jadli
, Faisal Mohd-Yasin
, Hamid Amini Moghadam
, Peyush Pande
, Jordan R. Nicholls
, Sima Dimitrijev
:
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs. IEEE Access 8: 187043-187051 (2020)
2010 – 2019
- 2018
- [j14]Hak-Kee Jung, Sima Dimitrijev
:
Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET. J. Inform. and Commun. Convergence Engineering 16(1) (2018) - 2017
- [j13]Mitar Milacic, Alex Pappachen James
, Sima Dimitrijev
:
Recognizing isolated words with minimum distance similarity metric padding. J. Intell. Fuzzy Syst. 32(4): 2933-2939 (2017) - 2016
- [j12]Hamid Amini Moghadam
, Sima Dimitrijev
, Jisheng Han, Daniel Haasmann
:
Active defects in MOS devices on 4H-SiC: A critical review. Microelectron. Reliab. 60: 1-9 (2016) - 2012
- [j11]Alex Pappachen James
, Sima Dimitrijev
:
Nearest Neighbor Classifier Based on Nearest Feature Decisions. Comput. J. 55(9): 1072-1087 (2012) - [j10]Alex Pappachen James
, Sima Dimitrijev
:
Ranked selection of nearest discriminating features. Hum. centric Comput. Inf. Sci. 2: 12 (2012) - [i3]Alex Pappachen James, Sima Dimitrijev:
Cognitive Memory Network. CoRR abs/1201.5943 (2012) - [i2]Alex Pappachen James, Sima Dimitrijev:
Feature selection using nearest attributes. CoRR abs/1201.5946 (2012) - [i1]Alex Pappachen James, Sima Dimitrijev:
Examplers based image fusion features for face recognition. CoRR abs/1201.5947 (2012) - 2010
- [j9]Alex Pappachen James
, Sima Dimitrijev
:
Inter-image outliers and their application to image classification. Pattern Recognit. 43(12): 4101-4112 (2010) - [c1]Alex Pappachen James
, Sima Dimitrijev
:
Role of Resolution in Noisy Pattern Matching. BAIP 2010: 120-124
2000 – 2009
- 2008
- [j8]Alex Pappachen James
, Sima Dimitrijev
:
Face Recognition Using Local Binary Decisions. IEEE Signal Process. Lett. 15: 821-824 (2008) - 2005
- [j7]Chang-Wu Hur, Sima Dimitrijev:
a-Si: H Photodiode Using Alumina Thin Film Barrier. J. Inform. and Commun. Convergence Engineering 3(4): 179-183 (2005) - [j6]Ninoslav Stojadinovic, Ivica Manic, Vojkan Davidovic
, Danijel Dankovic
, Snezana Djoric-Veljkovic
, Snezana Golubovic, Sima Dimitrijev
:
Effects of electrical stressing in power VDMOSFETs. Microelectron. Reliab. 45(1): 115-122 (2005) - 2003
- [j5]Sima Dimitrijev
, Philippe Jamet:
Advances in SiC power MOSFET technology. Microelectron. Reliab. 43(2): 225-233 (2003) - [j4]Handoko Linewih, Sima Dimitrijev
, Kuan Yew Cheong
:
Channel-carrier mobility parameters for 4H SiC MOSFETs. Microelectron. Reliab. 43(3): 405-411 (2003) - 2002
- [j3]Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic
, Vojkan Davidovic
, Snezana Golubovic, Sima Dimitrijev
:
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. Microelectron. Reliab. 42(4-5): 669-677 (2002) - [j2]Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic
, Vojkan Davidovic
, Danijel Dankovic
, Snezana Golubovic, Sima Dimitrijev
:
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectron. Reliab. 42(9-11): 1465-1468 (2002) - 2001
- [j1]Ninoslav Stojadinovic, Ivica Manic, Snezana Djoric-Veljkovic
, Vojkan Davidovic
, Snezana Golubovic, Sima Dimitrijev
:
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectron. Reliab. 41(9-10): 1373-1378 (2001)
Coauthor Index
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