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Xinghai Tang

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Journal Articles

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2001
[j4]
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  - journals/jssc/BhavnagarwalaTM01
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Azeez J. Bhavnagarwala, Xinghai Tang, James D. Meindl:
The impact of intrinsic device fluctuations on CMOS SRAM cell stability. IEEE J. Solid State Circuits 36(4): 658-665 (2001)
2000
[j3]
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Keith A. Bowman, Xinghai Tang, John C. Eble, James D. Menldl:
Impact of extrinsic and intrinsic parameter fluctuations on CMOS circuit performance. IEEE J. Solid State Circuits 35(8): 1186-1193 (2000)
1999
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Keith A. Bowman, Blanca Austin, John C. Eble, Xinghai Tang, James D. Meindl:
A physical alpha-power law MOSFET model. IEEE J. Solid State Circuits 34(10): 1410-1414 (1999)
1997
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  - journals/tvlsi/TangDM97
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Xinghai Tang, Vivek De, James D. Meindl:
Intrinsic MOSFET parameter fluctuations due to random dopant placement. IEEE Trans. Very Large Scale Integr. Syst. 5(4): 369-376 (1997)

Conference and Workshop Papers

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1996
[c1]
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Xinghai Tang, Vivek De, James D. Meindl:
Effects of random MOSFET parameter fluctuations on total power consumption. ISLPED 1996: 233-236

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