"The impact of intrinsic device fluctuations on CMOS SRAM cell stability."

Azeez J. Bhavnagarwala, Xinghai Tang, James D. Meindl (2001)

> Home

Details and statistics

DOI: 10.1109/4.913744

access: closed

type: Journal Article

metadata version: 2022-08-16

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/BhavnagarwalaTM01
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/BhavnagarwalaTM01
Azeez J. Bhavnagarwala, Xinghai Tang, James D. Meindl:
The impact of intrinsic device fluctuations on CMOS SRAM cell stability. IEEE J. Solid State Circuits 36(4): 658-665 (2001)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.