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Gilles Gasiot
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Journal Articles
- 2017
- [j5]Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu
, Gilles Gasiot, Philippe Roche:
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. Microelectron. Reliab. 76-77: 53-57 (2017) - 2015
- [j4]Jean-Luc Autran, Daniela Munteanu
, Soilihi Moindjie, Tarek Saad Saoud, S. Sauze, Gilles Gasiot, Philippe Roche:
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Microelectron. Reliab. 55(9-10): 1506-1511 (2015) - 2014
- [j3]Jean-Luc Autran, Daniela Munteanu
, Philippe Roche, Gilles Gasiot:
Real-time soft-error rate measurements: A review. Microelectron. Reliab. 54(8): 1455-1476 (2014) - [j2]Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu
, Sylvain Clerc, Gilles Gasiot, Philippe Roche:
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. Microelectron. Reliab. 54(9-10): 2278-2283 (2014) - 2010
- [j1]Jean-Luc Autran, Daniela Munteanu
, Philippe Roche, Gilles Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, Evgeny Yakushev
, S. Rozov, Pia Loaiza
, G. Warot, M. Zampaolo:
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. Microelectron. Reliab. 50(9-11): 1822-1831 (2010)
Conference and Workshop Papers
- 2016
- [c8]Fady Abouzeid
, Christophe Bernicot, Sylvain Clerc, Jean-Marc Daveau, Gilles Gasiot, Daniel Noblet, Dimitri Soussan, Philippe Roche:
30% static power improvement on ARM Cortex®-A53 using static biasing-anticipation. ESSCIRC 2016: 37-40 - 2015
- [c7]Fady Abouzeid
, Sylvain Clerc, Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Damien Croain, Gilles Gasiot, Dimitri Soussan, Philippe Roche:
28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors. ESSCIRC 2015: 108-111 - [c6]Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche:
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs. IRPS 2015: 2 - [c5]Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche:
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis. IRPS 2015: 11 - [c4]Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, Fady Abouzeid
, Sylvain Clerc, Lirida A. B. Naviner
, Philippe Roche:
Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test. IRPS 2015: 12 - 2012
- [c3]Sylvain Clerc, Fady Abouzeid
, Gilles Gasiot, David Gauthier, Philippe Roche:
A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access energy, with bit-interleaved radiation Soft Error tolerance. ESSCIRC 2012: 313-316 - [c2]Sylvain Clerc, Fady Abouzeid
, Gilles Gasiot, David Gauthier, Dimitri Soussan, Philippe Roche:
A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance. ICICDT 2012: 1-4 - 2008
- [c1]Philippe Roche, Mark Lysinger, Gilles Gasiot, Jean-Marc Daveau, Mehdi Zamanian, Pierre Dautriche:
Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS. IOLTS 2008: 46-48
Coauthor Index
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