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ORCIDYachao Zhang 0002
Person information
- affiliation (PhD 2017): Xidian University, School of Microelectronics, Xi'an, China
Other persons with the same name
- Yachao Zhang — disambiguation page
- Yachao Zhang 0001
![[0000-0002-6153-5004]](https://dblp.uni-trier.de/img/orcid-mark.12x12.png "0000-0002-6153-5004")
— Tsinghua University, Shenzhen International Graduate School, China (and 2 more)
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2020 – today
- 2024
[j6]Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang, Jing Ning, Hong Zhou, Jincheng Zhang:
Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci. China Inf. Sci. 67(2) (2024)- [j5]Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao:
High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci. China Inf. Sci. 67(6) (2024) - 2023
- [j4]Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao:
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci. China Inf. Sci. 66(2) (2023) - 2020
- [j3]Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao:
Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. IEEE Access 8: 20043-20050 (2020) - [j2]Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao:
Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. IEEE Access 8: 57126-57135 (2020) - [j1]Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao:
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Trans. Ind. Electron. 67(8): 6597-6606 (2020)
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