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"High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz."

Hanghai Du et al. (2024)

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DOI: 10.1007/S11432-024-3998-2

access: closed

type: Journal Article

metadata version: 2024-06-13

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  - journals/chinaf/DuHLSZDZNLZH24
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  - https://dblp.org/rec/journals/chinaf/DuHLSZDZNLZH24
Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao:
High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci. China Inf. Sci. 67(6) (2024)

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