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"1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a ..."

Sheng-Lei Zhao et al. (2023)

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DOI: 10.1007/S11432-022-3475-9

access: closed

type: Journal Article

metadata version: 2023-03-02

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Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao:
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci. China Inf. Sci. 66(2) (2023)

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