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"1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a ..."
Sheng-Lei Zhao et al. (2023)
- Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao:
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci. China Inf. Sci. 66(2) (2023)
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