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Yann Beilliard
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Journal Articles
- 2023
- [j4]Gaspard Goupy, Alexandre Juneau-Fecteau, Nikhil Garg, Ismael Balafrej, Fabien Alibart, Luc Frechette, Dominique Drouin, Yann Beilliard:
Unsupervised and efficient learning in sparsely activated convolutional spiking neural networks enabled by voltage-dependent synaptic plasticity. Neuromorph. Comput. Eng. 3(1): 14001 (2023) - 2022
- [j3]Stefanie Czischek, Victor Yon, Marc-Antoine Genest, Marc-Antoine Roux, Sophie Rochette, Julien Camirand Lemyre, Mathieu Moras, Michel Pioro-Ladriere, Dominique Drouin, Yann Beilliard, Roger G. Melko:
Miniaturizing neural networks for charge state autotuning in quantum dots. Mach. Learn. Sci. Technol. 3(1): 15001 (2022) - [j2]Tony Liu, Amirali Amirsoleimani, Jianxiong Xu, Fabien Alibart, Yann Beilliard, Serge Ecoffey, Dominique Drouin, Roman Genov:
CODEX: Stochastic Encoding Method to Relax Resistive Crossbar Accelerator Design Requirements. IEEE Trans. Circuits Syst. II Express Briefs 69(8): 3356-3360 (2022) - 2020
- [j1]Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, Mohammad Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin:
In-Memory Vector-Matrix Multiplication in Monolithic Complementary Metal-Oxide-Semiconductor-Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives. Adv. Intell. Syst. 2(11): 2000115 (2020)
Conference and Workshop Papers
- 2021
- [c3]Nikhil Garg, Ismael Balafrej, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean Rouat:
Signals to Spikes for Neuromorphic Regulated Reservoir Computing and EMG Hand Gesture Recognition. ICONS 2021: 29:1-29:8 - 2014
- [c2]Yann Beilliard, Stéphane Moreau, Léa Di Cioccio, Perceval Coudrain, G. Romano, A. Nowodzinski, F. Aussenac, P.-H. Jouneau, E. Rolland, Thomas Signamarcheix:
Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding. 3DIC 2014: 1-8 - 2013
- [c1]Yann Beilliard, Perceval Coudrain, Léa Di Cioccio, Stéphane Moreau, Loic Sanchez, Brigitte Montmayeul, Thomas Signamarcheix, Rafael Estevez, Guillaume Parry:
Chip to wafer copper direct bonding electrical characterization and thermal cycling. 3DIC 2013: 1-7
Informal and Other Publications
- 2024
- [i14]Pierre-Antoine Mouny, Raphaël Dawant, Patrick Dufour, Matthieu Valdenaire, Serge Ecoffey, Michel Pioro-Ladriere, Yann Beilliard, Dominique Drouin:
Towards scalable cryogenic quantum dot biasing using memristor-based DC sources. CoRR abs/2404.10694 (2024) - [i13]Victor Yon, Bastien Galaup, Claude Rohrbacher, Joffrey Rivard, Clement Godfrin, Roy Li, Stefan Kubicek, Kristiaan De Greve, Louis Gaudreau, Eva Dupont-Ferrier, Yann Beilliard, Roger G. Melko, Dominique Drouin:
Robust quantum dots charge autotuning using neural networks uncertainty. CoRR abs/2406.05175 (2024) - [i12]Nikhil Garg, Davide Florini, Patrick Dufour, Eloi Muhr, Mathieu-Coumba Faye, Marc Bocquet, Damien Querlioz, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean-Michel Portal:
Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits. CoRR abs/2406.19667 (2024) - 2023
- [i11]Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy:
A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. CoRR abs/2305.16187 (2023) - [i10]Philippe Drolet, Raphaël Dawant, Victor Yon, Pierre-Antoine Mouny, Matthieu Valdenaire, Javier Arias-Zapata, Pierre Gliech, Sean U. N. Wood, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Dominique Drouin:
Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars. CoRR abs/2305.18495 (2023) - [i9]Frédéric Marcotte, Pierre-Antoine Mouny, Victor Yon, Gebremedhin A. Dagnew, Bohdan Kulchytskyy, Sophie Rochette, Yann Beilliard, Dominique Drouin, Pooya Ronagh:
A Cryogenic Memristive Neural Decoder for Fault-tolerant Quantum Error Correction. CoRR abs/2307.09463 (2023) - [i8]Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup, Serge Ecoffey, Michel Pioro-Ladriere, Yann Beilliard, Dominique Drouin:
Analog programming of CMOS-compatible Al2O3/TiO2-x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming. CoRR abs/2307.15538 (2023) - 2022
- [i7]Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladriere, Dominique Drouin:
Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control. CoRR abs/2203.07107 (2022) - [i6]Nikhil Garg, Ismael Balafrej, Terrence C. Stewart, Jean-Michel Portal, Marc Bocquet, Damien Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, Fabien Alibart:
Voltage-Dependent Synaptic Plasticity (VDSP): Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential. CoRR abs/2203.11022 (2022) - 2021
- [i5]Nikhil Garg, Ismael Balafrej, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean Rouat:
Signals to Spikes for Neuromorphic Regulated Reservoir Computing and EMG Hand Gesture Recognition. CoRR abs/2106.11169 (2021) - [i4]Abdelouadoud El Mesoudy, Gwénaëlle Lamri, Raphaël Dawant, Javier Arias-Zapata, Pierre Gliech, Yann Beilliard, Serge Ecoffey, Andreas Ruediger, Fabien Alibart, Dominique Drouin:
Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing. CoRR abs/2106.11808 (2021) - [i3]Yann Beilliard, Fabien Alibart:
Multi-terminal memristive devices enabling tunable synaptic plasticity in neuromorphic hardware: a mini-review. CoRR abs/2109.08720 (2021) - 2019
- [i2]Yann Beilliard, Maxime Godard, Aggelos Ioannou, Astrinos Damianakis, Michael Ligerakis, Iakovos Mavroidis, Pierre-Yves Martinez, David Danovitch, Julien Sylvestre, Dominique Drouin:
FPGA-based Multi-Chip Module for High-Performance Computing. CoRR abs/1906.11175 (2019) - [i1]Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin:
Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K). CoRR abs/1908.05545 (2019)
Coauthor Index
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