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2020 – today
- 2021
[j1]Tsung-Yung Jonathan Chang, Yen-Huei Chen
, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. IEEE J. Solid State Circuits 56(1): 179-187 (2021)- 2020
- [c4]Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. ISSCC 2020: 238-240
2010 – 2019
- 2017
- [c3]Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu:
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. ISSCC 2017: 206-207 - [c2]Michael Clinton, Hank Cheng, Hung-Jen Liao, Robin Lee, Ching-Wei Wu, Johnny Yang, Hau-Tai Hsieh, Frank Wu, Jung-Ping Yang, Atul Katoch, Arun Achyuthan, Donald Mikan, Bryan Sheffield, Jonathan Chang:
12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications. ISSCC 2017: 210-211 - 2013
- [c1]Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang:
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. ISSCC 2013: 316-317
Coauthor Index
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