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G. Guégan

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Journal Articles

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2002
[j3]
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  - journals/mr/FadlallahGJZG02
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M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectron. Reliab. 42(1): 41-46 (2002)
[j2]
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B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42(9-11): 1405-1408 (2002)
2001
[j1]
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François Lime, Gérard Ghibaudo, G. Guégan:
Stress induced leakage current at low field in ultra thin oxides. Microelectron. Reliab. 41(9-10): 1421-1425 (2001)

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