Runsheng Wang

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Shaofeng Guo

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Publications

2020
[j40]
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Zuodong Zhang, Runsheng Wang, Zhe Zhang, Yawen Zhang, Shaofeng Guo, Ru Huang:
Circuit Reliability Comparison Between Stochastic Computing and Binary Computing. IEEE Trans. Circuits Syst. 67-II(12): 3342-3346 (2020)
2019
[c37]
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  - conf/asicon/WangZGWWWH19
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Runsheng Wang, Zhe Zhang, Shaofeng Guo, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang:
OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits. ASICON 2019: 1-4
2018
[j38]
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  - journals/mr/GuoWRLLJWH18
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Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81: 101-111 (2018)
[c31]
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  - conf/aspdac/HsuGLXLWHP18
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Che-Lun Hsu, Shaofeng Guo, Yibo Lin, Xiaoqing Xu, Meng Li, Runsheng Wang, Ru Huang, David Z. Pan:
Layout-dependent aging mitigation for critical path timing. ASP-DAC 2018: 153-158
[c28]
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  - conf/irps/GuoLWZZWH18
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Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang:
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. IRPS 2018: 6-1
[c27]
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  - conf/iscas/GuoLWMWH18
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Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang:
Evaluation of SRAM V_min shift induced by random telegraph noise (RTN): physical understanding and prediction method. ISCAS 2018: 1-4
2017
[c26]
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  - conf/asicon/WangJGH17
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Runsheng Wang, Xiaobo Jiang, Shaofeng Guo, Ru Huang:
How close to the CMOS voltage scaling limit for FinFET technology? - Near-threshold computing and stochastic computing. ASICON 2017: 56-59
[c25]
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  - conf/iccad/GuoWYHRWLHGCXH17
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Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang:
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD 2017: 780-785

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