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Bo Yi
Publications
- 2023
- [j50]Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang:
Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. Microelectron. J. 139: 105895 (2023) - [c29]Moufu Kong, Ke Huang, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang:
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance. ASICON 2023: 1-4 - [c28]Moufu Kong, Zhi Lin, Hongfei Deng, Bo Yi, Rui Jin, Hongqiang Yang:
A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance. ASICON 2023: 1-4 - [c27]Bo Yi, Haimeng Huang, Haoran Hu, MouFu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang:
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. ASICON 2023: 1-4 - 2021
- [c18]Moufu Kong, Zewei Hu, Jiacheng Gao, Zongqi Chen, Jiaxin Guo, Sadaf Ali Nafees, Bo Yi, Hongqiang Yang:
A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. ASICON 2021: 1-4 - [c17]Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang:
A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. ASICON 2021: 1-4 - [c16]Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi:
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. ASICON 2021: 1-4 - [c15]Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang:
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. ASICON 2021: 1-4 - 2020
- [j29]Bo Yi, Yi Feng Peng, Qing Zhao, MouFu Kong, Junji Cheng, Haimeng Huang:
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. IEICE Electron. Express 17(2): 20190673 (2020) - 2019
- [j20]Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, MouFu Kong:
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield. IEICE Electron. Express 16(5): 20181135 (2019) - [c11]Rongxin Chen, Bo Yi, MouFu Kong, Xingbi Chen:
Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability. ASICON 2019: 1-4 - [c10]Cong Liu, MouFu Kong, Hanzhi Chen, Bo Yi, Bingke Zhang, Xingbi Chen:
Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes. ASICON 2019: 1-4
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