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"A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for ..."

Moufu Kong et al. (2021)

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DOI: 10.1109/ASICON52560.2021.9620483

access: closed

type: Conference or Workshop Paper

metadata version: 2021-12-06

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  dblp key:
  - conf/asicon/KongHWLYY21
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Moufu Kong, Ke Huang, Bin Wang, Cong Liu, Bo Yi, Hongqiang Yang:
A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. ASICON 2021: 1-4

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