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"A split-gate SiC trench MOSFET with embedded unipolar diode for improved ..."

Zheng Wu et al. (2021)

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DOI: 10.1109/ASICON52560.2021.9620233

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi:
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. ASICON 2021: 1-4

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