Rouwaida Kanj

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Zhuo Li 0001

> Home > Persons > Rouwaida Kanj

Publications

2012
[c25]
- view
  authority control:
- export record
  dblp key:
  - conf/dac/KanjJLHN12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/dac/KanjJLHN12
Rouwaida Kanj, Rajiv V. Joshi, Zhuo Li, Jerry Hayes, Sani R. Nassif:
Yield estimation via multi-cones. DAC 2012: 1107-1112
2009
[c13]
- view
  authority control:
- export record
  dblp key:
  - conf/isqed/ZhouKALJNS09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isqed/ZhouKALJNS09
Nancy Ying Zhou, Rouwaida Kanj, Kanak Agarwal, Zhuo Li, Rajiv V. Joshi, Sani R. Nassif, Weiping Shi:
The impact of BEOL lithography effects on the SRAM cell performance and yield. ISQED 2009: 607-612
2008
[c12]
- view
  authority control:
- export record
  dblp key:
  - conf/islped/KanjJLKNZSN08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/islped/KanjJLKNZSN08
Rouwaida Kanj, Rajiv V. Joshi, Zhuo Li, Jente B. Kuang, Hung C. Ngo, Nancy Ying Zhou, Weiping Shi, Sani R. Nassif:
SRAM methodology for yield and power efficiency: per-element selectable supplies and memory reconfiguration schemes. ISLPED 2008: 87-92
[c10]
- view
  authority control:
- export record
  dblp key:
  - conf/isqed/KanjLJLN08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isqed/KanjLJLN08
Rouwaida Kanj, Zhuo Li, Rajiv V. Joshi, Frank Liu, Sani R. Nassif:
A Root-Finding Method for Assessing SRAM Stability. ISQED 2008: 804-809

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.