Matteo Meneghini

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Benoit Bakeroot

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Publications

2023
[c38]
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Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6
2022
[c32]
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  - conf/irps/FaveroSMGBBYDMZ22
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Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1
2020
[c23]
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  - conf/irps/MukherjeeSMZMYG20
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Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5
2019
[c17]
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  - conf/irps/StoffelsPDBTSFZ19
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Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10
2018
[c13]
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  - conf/irps/StockmanCTMMZMB18
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Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4
2017
[c12]
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  - conf/essderc/StockmanUTMBM17
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Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC 2017: 130-133

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